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  • Azides  (1)
  • detonation  (1)
  • gallium nitride  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and Structures of (N3)2Ga[(CH2)3NMe2], (N3)Ga[(CH2)3NMe2]2 and (N3)3Ga(NR3) (R = CH3, C2H5) (1999)
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 1999 (1999), S. 2127-2134 
    Details
    ISSN: 1434-1948
    Keywords: Gallium ; Azides ; Chemical vapour deposition ; Gallium nitride ; Single source precursors ; Chemistry ; General Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The synthesis, properties and X-ray single crystal structure analysis of the intramolecularly adduct-stabilised organogallium bisazide (N3)2Ga[(CH2)3NMe2] (1), the mono azide (N3)Ga[(CH2)3NMe2]2 (2) and the trialkylamine adducts of triazidogallium of the type (N3)3Ga(NR3) (3a-d; R = alkyl) are reported. An unusual isomer 1b of compound 1 is described, which was obtained by slow cooling of the analytically pure neat liquid compound 1 to 0 °C. The new and unusual structure 1b can be regarded as a weak associate of dimers linked together by head-to-tail azide bridges. In contrast, compounds 2 and 3a-b (R = CH3, C2H5) are monomeric in the solid state. The suitability of the volatile compounds 1 and 2 as single source precursors to grow GaN thin films by chemical vapour deposition is compared, showing that preferentially oriented crystalline films can be obtained from compound 2 on sapphire substrates at 600-700 °C in vacuo (0.1 Pa). However the films have a grey rather than a transparent appearance, which is presumably due to N-deficiency owing to the lower N-content of the single molecule precursor 2 relative to 1.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides (1998)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 8 (1998), S. 135-146 
    Details
    ISSN: 1057-9257
    Keywords: gallium nitride ; nanocrystallites ; detonation ; gallium azide ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized by the thermal induced detonation of molecular precursors of the type (R3N)Ga(N3)3 (R=CH3, C2H5, etc.). The method allows the control of the particle size regime from 2 to about 1000 nm. X-ray diffraction and Rietveld simulations revealed an anisotropic platelet-like shape of the particles. The obtained GaN material was as well characterized by transmission electron microscopy and electron diffraction, photoluminescence spectroscopy, SEM, IR, RAMAN, thermal gas effusion/mass spectrometry, thermal analysis, elemental analysis. Gas absorption measurements (BET method) showed a specific surface area of about 90 m2 · g-1. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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