ISSN:
1057-9257
Keywords:
II-VI compounds
;
CdTe
;
Bridgman growth
;
Control of stoichiometry
;
Vacancy correlation
;
IR transmission
;
Carrier concentration
;
Substitutional acceptors
;
Vacancy correlation
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
A correlation between carrier concentration and the concentration of important substitutional acceptors (AgCd, CuCd, PTe) determined from photoluminescence analysis is reported for p-and n-type CdTe crystals grown by various Bridgman techniques. We consider that the results show that the concentrations and distribution coefficients are controlled by the densities of Cd(Te) vacancies which are present under crystal growth conditions.
Additional Material:
2 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030141
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