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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 110-119 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth, structure, and annealing behavior of Al films, formed by in situ vapor deposition on GaN(0001)–(1×1) near 25 °C, have been studied using Auger, electron energy loss, x ray and ultraviolet photoemission spectroscopies and low-energy electron diffraction. Film growth occurs by a Stranski–Krastanov process with reaction at the immediate interface leading to metallic Ga. Annealing at (approximately-greater-than)800 °C leads to release of N, which reacts with Al to form a (1×1)-ordered layer of AlN, possibly alloyed with a small amount of Ga. The AlN layer has been characterized using the various spectroscopies, and the work function, band bending, and electron affinity of GaN and of the AlN overlayer have been obtained. The Al/GaN Schottky barrier height has been measured and compared with previous results for Ni/GaN.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3441-3445 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si/Si1−xGex superlattices having layers as thin as 1.5 nm have been grown by an ultrahigh vacuum/chemical vapor deposition system. High-resolution double-crystal x-ray diffraction, and conventional and high-resolution cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical x-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various periodicity. A cross-sectional transmission electron micrograph of an 80 period Si(4.2 nm)/Si0.878Ge0.122 (1.5 nm) superlattice, in which each individual layers was clearly resolved, demonstrated the capability of this growth technique for nanometer thick layer deposition.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4921-4923 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550 °C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10−7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1092-1094 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 °C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 °C or below. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 143-145 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of topographical features of 0.3 μm scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 53 (2004), S. 0 
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A survey of symptoms of phytophthora root and collar rot of common (Alnus glutinosa) and grey alder (A. incana) in riparian and forest stands in Bavaria was conducted by the Bavarian State Forestry and river authorities. Symptoms were seen in 1041 out of 3247 forest alder stands. The majority of the affected stands (80·9%) were less than 21 years old; 46% of these young stands were growing on nonflooded sites and 92% had been planted. The riparian survey showed that symptoms were widespread along more than 50% of the river systems. Along some rivers the disease incidence exceeded 50%. The ‘alder Phytophthora’ was recovered from 166 of 185 riparian and forest alder stands with symptoms. In 58 of the 60 rivers and streams investigated in detail, the source of inoculum was traced back to infested young alder plantations growing on the river banks or on forest sites that drain into the rivers. Once introduced to a river system, the ‘alder Phytophthora’ infects alders downstream. Baiting tests showed that the ‘alder Phytophthora’ was present in rootstocks of alders from three out of four nurseries which regularly bought in alder plants for re-sale, but not in rootstocks from four nurseries that grew their own alders from seed. In addition, the infected nurseries used water from infested water courses for irrigation. The Bavarian State Ministry for Agriculture and Forestry has developed a code of practice for producing healthy alder plants in forest nurseries. This includes a 3-year fallow period between bare-rooted alder crops because of poor survival of the ‘alder Phytophthora’ in soil.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The effect of Phytophthora species, soil chemistry, precipitation and temperature on the vitality of oak was evaluated in 32 oak stands in southern Sweden. In addition, the relationship between the occurrence of Phytophthora species and soil conditions was determined. The results showed that there was a weak association between the presence of P. quercina, the most frequently recovered Phytophthora species in southern Sweden, and the vitality of the oak stands (determined from estimates of crown defoliation of individual trees). The pathogens occurred more frequently in clayey and loamy soils that were less acidic and which had higher base saturation. However, they were found in all but the most acidic soils (pH 〈 3·5). In stands where Phytophthora species were not present, positive correlations between the average crown defoliation and proportion of damaged trees with average summer precipitation and average annual precipitation were found. There were no significant differences in soil chemistry between healthy and declining stands included in this study, and no significant correlations were found between any soil parameter and crown vitality. Based on the results from these 32 oak stands, it is likely that the decline of oaks in southern Sweden can be attributed to several different site-specific factors, such as infection by P. quercina or unusual weather events, which interact with a number of biotic and abiotic factors, leading to oak decline.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 49 (2000), S. 0 
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A survey was made on the occurrence of soilborne Phytophthora species in 35 oak stands on a range of geologically different sites in Bavaria. The most widespread species were P. quercina, P. cambivora and P. citricola. Seven other Phytophthora species were isolated infrequently. The fine root systems of 106 healthy and 111 declining mature trees of Quercus robur and Q. petraea were intensively investigated. The results indicate that, depending on the site conditions, at least two different complex diseases are referred to under the name ‘oak decline’. On sites with a mean soil pH (CaCl2) 〈inlineGraphic alt="geqslant R: gt-or-equal, slanted" extraInfo="nonStandardEntity" href="urn:x-wiley:00320862:PPA521:ges" location="ges.gif"/〉 3·5 and sandy-loamy to clayey soil texture Phytophthora spp. were commonly isolated from rhizosphere soil, and highly significant correlations existed between crown transparency and various root parameters. Oaks with P. quercina or other Phytophthora spp. in their rhizosphere had markedly higher levels of fine root damage than oaks without Phytophthora spp., and were subject to a relative risk of severe crown symptoms of 2·1 and 2·8, respectively. In contrast, in stands with sandy to sandy-loamy soils and a mean soil pH 〈inlineGraphic alt="leqslant R: less-than-or-eq, slant" extraInfo="nonStandardEntity" href="urn:x-wiley:00320862:PPA521:les" location="les.gif"/〉 3·9, Phytophthora spp. were not found. In these stands, correlations between crown transparency and various root parameters were either less significant or not significant. It is concluded that Phytophthora species are strongly involved in oak decline on sandy-loamy to clayey sites with a mean soil-pH (CaCl2) 〈inlineGraphic alt="geqslant R: gt-or-equal, slanted" extraInfo="nonStandardEntity" href="urn:x-wiley:00320862:PPA521:ges" location="ges.gif"/〉 3·5.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1439-0329
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Oligonucleotide primers were developed for the polymerase chain reaction (PCR)-based detection of selected Phytophthora species which are known to cause root-rot diseases in European forest trees. The primer pair CITR1/CITR2, complementing both internal transcribed spacer regions of the ribosomal RNA genes, gave a 711 bp amplicon with Phytophthora citricola. The Phytophthora cambivora specific primer pair CAMB3/CAMB4, producing a 1105bp amplicon, as well as the Phytophthora quercina specific primer pair QUERC1/QUERC2, producing a 842 bp amplicon, were derived from randomly amplified polymorphic DNA (RAPD)-fragments presented in this paper. All three primer pairs revealed no undesirable cross-reaction with a diverse test collection of isolates including other Phytophthora species, Pythium, Xerocomus, Hebeloma, Russula, and Armillaria. Under the PCR conditions described the detection of a well discernable amplicon was possible down to 100 pg (P. cambivora), 4pg (P. quercina), and 2pg (P. citricola) target DNA. This diagnostic PCR system was able to detect P. citricola, P. quercina, and P. cambivora in seedlings of pendunculate oak (Quercus robur) and European beech (Fagus sylvatica) which were artificially infected under controlled conditions.
    Type of Medium: Electronic Resource
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