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  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of a Gaussian-modified dispersion model for atmospheric release from the Marcoule nuclear site (2000)
    Springer
    Environmental modeling and assessment 5 (2000), S. 75-81 
    Details
    ISSN: 1573-2967
    Keywords: modified Gaussian model ; in situ measurements ; model evaluation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract This paper presents a mathematical model of local pollutant dispersion designed to compute the concentration field above and around the Marcoule nuclear site. The model is based on integrating the classical turbulent diffusion equation, corrected (prior to integration) by experimental wind tunnel data obtained for a scaled-down model of the site. The computed results are compared with full-scale experimental observations at Marcoule in the case of neutral atmosphere. A comparison with the standard Gaussian model is also made. Finally, a critical analysis of the model is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1019001409408
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  • 2
    Electronic Resource
    Electronic Resource
    ESCA investigation of SnOx films used as gas sensors (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 372-375 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The electronic properties of amorphous and ion-implanted polycrystalline SnO2 films have been studied using x-ray photoemission spectromicroscopy. First, we analysed the degree of oxidation and the homogeneity of as-deposited films. The SnO and SnO2 phases were identified from their valence band spectra rather than from the Sn 3d core level spectra. Then we studied the damage effects due to the implantation of Pd+ and Ga+ ions in polycrystalline films. The ion bombardment of SnO2 films results in drastic changes of valence-band spectra which is correlated to compositional changes. Annealing in air at 600 °C for 4 h leads to complete recovery of radiation damage. However, after such thermal annealings, the film surface still contains a relatively high amount of SnO (5-10%).
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220181
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    Paper (German National Licenses)
    Fulltext
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