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  • 1
    Electronic Resource
    Electronic Resource
    Acid-catalyzed degradation mechanism of poly(phthalaldehyde): Unzipping reaction of chemical amplification resist (1997)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 35 (1997), S. 77-89 
    Details
    ISSN: 0887-624X
    Keywords: poly(phthalaldehyde) ; degradation mechanism ; molecular orbital theory ; activation energy of degradation ; acid catalyzed degradation ; unzipping reaction ; resist ; chemical amplification ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The acid-catalyzed degradation mechanism of chemical amplification resists based on end-capped poly(phthalaldehyde) has been elucidated by semi-empirical molecular orbital calculations. It is concluded that: (i) two different starting points exist in the degradation of end-capped poly(phthalaldehyde), the central part of the polymer as well as the polymer end; (ii) in both cases, after the first protonation, cationic hydroxyl compounds generated decompose to the identical cation intermediate, which can unzip itself to phthalaldehyde monomers successively (unzipping reaction); (iii) the hemiacetal type intermediates hardly degrade to the same intermediate without acid catalyst; (iv) the overall activation energy for the degradation reaction is less than 14 kcal/mol in all the cases. Thus, the poly(phthalaldehyde) resist can easily self-develop below 100°C, as reported in the literature. © 1997 John Wiley & Sons, Inc.
    Additional Material: 16 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    Theoretical considerations on the sensitivities of electron beam resists (1977)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 17 (1977), S. 390-395 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A theoretical study has been carried out in order to explain the sensitivities of electron beam and X-ray resists. A preliminary investigation reveals that the behavior of these resists, on irradiation by high energy radiation, may be considered to be the electronically-excited species in the polymer. To elucidate the chemical reactions in the excited states the adiabatic potential curves are calculated by the INDO/S procedure, which considers all the valence electrons and all the singly excited electronic configurations. Polyethylene and polyisobutylene were chosen as representative of crosslinkable and degradable polymers, respectively, since there is a parallelism between the beam sensitivity of resists and the effects of high energy radiation on polymers. Polyisobutylene has many antibonding curves favorable for the main chain scission in the excited states and polyethylene does not except for one improbable state. It was concluded that degradability is explainable by the ease of bond fission in the excited states; the crosslinkability is considered to be nondegradable property.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760170612
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma developable photoresist containing electronic excitation energy quenching system (1983)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 993-999 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A dry developable negative working resist composition comprised of poly(methyl isopropenyl ketone) (PMIPK) and 4-methyl-2,6-di(4′-azido-benzylidene) cyclohexanone-1 was examined. The main photochemical product formed in the resist pattern was found to be a secondary amine which crosslinks PMIPK. Post-annealing forms a hydrogen-bonded product which shows a powerful electronic excitation energy quenching effect. The quencher is more powerful than the aromatic compound arising from the azide by post-annealing only. The residual resist thickness of the negative pattern is about 80 percent of the initial thickness of the coating in spite of all the azide compound remaining in the resist coating. The obtained dry developed resist pattern has a high dry etch resistance. Etchings of Si and SiO2 were performed by plasma and reactive ion etching, respectively.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760231804
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Dry developable resist in e-beam and sr lithography (1986)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 26 (1986), S. 1148-1152 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Dry developable resists comprised of poly(methyl isopropenyl ketone) (PMIPK) and 4-methyl-2,6-dI-(4′-azldoben-zylidene)-cyclohexanone-1 gave excellent results in SK lithography, i. e., high aspect ratio resist patterns with vertical walls were easily obtained by maskless dry etching in the single layer resist process. Because of the simplicity of single layer resist processing and the high etch rate in maskless dry etching for the formation of thick resist patterns, the dry developable resist in SR lithography may be advantageous to the multilayer resist for the purpose of generating high resolution, thick resist patterns with vertical walls. The resolution limit of the dry developable resist which reproduces the designed dimensions was 100 nm line and 200 nm space when a conventional e-beam apparatus was used at 20 KV in the dry developable multilayer resist process.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760261615
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    Paper (German National Licenses)
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