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  • 1
    Electronic Resource
    Electronic Resource
    Über das Zustandsdiagramm der Hg-Tl-Legierungen (1916)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 94 (1916), S. 358-370 
    Details
    ISSN: 0863-1786
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19160940121
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  • 2
    Electronic Resource
    Electronic Resource
    Über die Schmelzwärme und die Bildungswärme von Metallverbindungen (1916)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 94 (1916), S. 329-357 
    Details
    ISSN: 0863-1786
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Es wurde der Zusammenhang der Zeitdauer des Haltepunktes auf der Abkühlungskurve mit der Schmelzwärme von Metallen und ihren Verbindungen ermittelt. Mit Hilfe dieser Feststellung konnten dann die Schmelzwärmen der Metallverbindungen, sowie von Mg und A1, bestimmt werden. Zur Kontrolle wurden dieselben nochmals nach dem kalorimetrischen Verfahren bestimmt.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19160940120
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  • 3
    Electronic Resource
    Electronic Resource
    The reaction of NiO and α-Al2O3 studied by Rutherford backscattering (1981)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 3 (1981), S. 229-234 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The interfacial reaction of NiO and α-Al2O3 to NiAl2O4 is investigated by means of Rutherford backscattering spectrometry (RBS) using 2.95 MeV He+ ions. The NiO is obtained by oxidation at 800°C of a nickel film vapour deposited on to alumina substrates. The reaction of NiO and Al2O3 does not proceed markedly at 800°C. At ∼ 1100°C, the reaction to stoichiometric NiAl2O4 is found to be followed by a slower process leading to a spinel of the non-stoichiometric composition NiAl2O4 · xAl2O3. At ∼ 1100°C, a marked volatilization of NiO is noted. At ∼ 1000°C the reaction also proceeds at a noticeable rate. However, at this temperature the diffusion process stops at the stoichiometric spinel composition. No volatilization of NiO is observed.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740030508
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative determination of the kinetics of the reaction of NiO and Al2O3 to NiAl2O4 by Rutherford backscattering (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 119-131 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A quantitative evaluation of RBS data resulted in data for the parabolic reaction rate constants for the reaction between Al2O3 and NiO at temperatures from 960°C up to 1105°C. The activation energy and the preexponential factor were in good agreement with literature data. The experimental data of this work also permitted a detailed description of reaction mechanisms on a microscopic level. The reaction between Al2O3 and NiO starts with penetration of Al3+ ions along the grain boundaries of NiO, followed by counter-diffusion of Ni2+ ions. A thin spinel layer (NiAl2O4) is formed at the Al2O3/NiO interface, after a relatively short nucleation period. The reaction then proceeds, both by lateral and perpendicular diffusion. In an appendix, the detailed evaluation procedure of the spectra was described.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050308
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of the grain structure of Al2O3 substrate on the solid state reaction with a layer of NiO: A comparative backscattering spectrometry study 1 (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 167-169 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The solid state reaction of Al2O3—NiO reaction couples was investigated by means of Rutherford backscattering spectrometry. NiO films on the alumina substrates were obtained by vapour-deposition of Ni and subsequent oxidation at 800°C in air. Substrates of about the same surface roughness, thus providing equal contact areas for the reaction couples, were used. The materials were characterized by scanning electron microscopy. In spite of the different structure and a grain size that varied within a factor of 10, of the Al2O3 materials, no obvious difference in the spectra based on the used reaction couples could be detected. Suggested substantial contribution to the reaction from surface diffusion and grain boundary diffusion along the substrate grain boundaries could therefore be rejected.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050408
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  • 6
    Electronic Resource
    Electronic Resource
    Die Kristallstruktur von InTeCl; ein neuer defekttetraedrischer StrukturtypVorbericht: G. Roos, G. Eulenberger u. H. Hahn, Naturwissenschaften 59, 363 (1972). (1973)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 396 (1973), S. 284-296 
    Details
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: The Crystal Structure of InTeCl; a New Defect Tetrahedral Structure TypeInTeCl is monoclinic, space group P21/c with a = 7.42, b = 14.06, c = 7.07 Å, β = 92.1°, and Z = 8. The crystal structure was determined from single crystal X-ray data by means of three dimensional PATTERSON and FOURIER syntheses. The parameters were refined by the least-squares method to an R value of 0.084 for 932 observed reflections. The compound represents a new ternary defect tetrahedral type. Strongly distorted InTe3Cl-tetrahedra from layer complexes situated parallel to the (100) plane by sharing corners and edges which are occupied by Te atoms. The Cl atoms belong to one tetrahedron only and do not contribute to the linkage. The Te atoms are surrounded by three In atoms in a approximately trigonal pyramidal arrangement. The bonding is discussed.
    Notes: InTeCl kristallisiert monoklin in der Raumgruppe P21/c mit acht Formeleinheiten in der Elementarzelle; die Gitterkonstanten sind: a = 7,42, b = 14,06 und c = 7,07 Å, β = 92,1°. Die Kristallstruktur wurde röntgenographisch mit Hilfe von dreidimensionalen PATTERSON- und FOURIER-Synthesen bestimmt und nach der Methode der kleinsten Fehlerquadrate bis zu einem R-Wert von 8,4% für 932 beobachtete Reflexe verfeinert. Die Verbindung repräsentiert einen neuen ternären defekttetraedrischen Strukturtyp, bei welchem stark deformierte InTe3Cl-Tetraeder durch Ecken- und Kantenverknüpfung über die Te-Atome parallel zur (100)-Ebene liegende Schichtkomplexe bilden. Die Cl-Atome gehören jeweils nur einem Tetraeder an und tragen nicht zur Vernetzung bei. Die Te-Atome sind in angenähert trigonal-pyramidaler Anordnung von 3 In-Atomen umgeben. Die Bindungsverhältnisse werden diskutiert.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19733960307
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of the interaction of precipitating nickel (II) hydroxide with silica surfaces by rutherford back scattering (RBS) (1979)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 449 (1979), S. 115-126 
    Details
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Untersuchung der Wechselwirkung von gefälltem Nickel(II)-hydroxid mit SiO2-Oberflächen durch Rutherford-StreuungRutherford-Streuung (RBS) wurde in Kombination mit der Rasterelektronenmikroskopie (SEM) zur Untersuchung der Wechselwirkung von gefälltem Nickelydroxid mit Quarzoberflächen angewandt.Die Hydroxylierung der Quarzoberfläche ist eine Voraussetzung für die Bildung einer schwach haftenden Nickelhydrosilicatschicht. An feuerpolierten Quarzoberflächen erfolgt keine Reaktion, nur eine sehr schwach haftende Nickelhydroxidschicht wird angelagert. Wenn jedoch das Nickelhydroxid in Gegenwart von feinverteiltem suspendiertem Siliciumdioxid gefällt wird, scheinen die gefällten Nickelionen bevorzugt mit den kleinen reaktiven SiO2-Teilchen zu reagieren. Die erhaltenen Ergebnisse stimmen gut mit Literaturangaben überein. Die Kombination von RBS und SEM scheint eine sehr gute Technik für die Untersuchung solcher Oberflächenreaktinen zu sein.
    Notes: Rutherford Back Scattering (RBS) has been applied in combination with Scanning Electron Microscopy (SEM) to investigate the interaction of precipitatig nickelhydroxide with quartz surfaces.It was found that hydroxylation of the quartz surface is a prerequisite for the formation of a weakly adhering nickelhydrosilicate layer. On a fire-polished quartz surface no reaction with the quartz took place, a very weakly adhering nickelhydroxide layer being deposited. When the nickelhydroxide was precipitated in the presence of finely divided suspended silica, the precipitating nickel ions appeared to react preferently with the small reactive silica particals.It is shown that these results agree well with literature data.RBS together with SEM appeared to be a powerfull technique for studying these surface reactions.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19794490112
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