ISSN:
0935-9648
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
The effects of unintentional hydrogen incorporation into both Si and III-V materials during processing is likely to become more important as device dimensions are scaled down and even tighter control is required on the doping densities within the active and contact regions. Since hydrogen is a constituent of virtually every chemical reagent or gas that is used in semiconductor processing it is almost impossible to avoid near-surface dopant passivation occurring during some of the processing steps. However, relatively low-temperature heat treatments are effective in reactivating these dopants.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/adma.19920040503
Permalink