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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 68 (1961), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 1 (1989), S. 1850-1854 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (3)/(2) ω0 harmonic emission has been observed from a laser-produced plasma using exploding foil targets illuminated by 1.053 μm laser light with a 300 psec square pulse. The shift of the measured wavelength from (2)/(3) λ0 is found to depend markedly on the target thickness. Variation of the flow velocity and thus the Doppler shifts of the wave frequency with target thickness is found to be more important than variation of the electron temperature. Adjusting the measured wavelength by Doppler shifts calculated with flow velocities from simulations brings the measurements from different target thicknesses into agreement. These results indicate that previous predictions of electron temperatures from analyses of half-harmonic spectra from inertial confinement fusion plasmas are up to a factor of 2 too small.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 117-119 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on a new type of extremely quiet and sensitive GaAs/AlGaAs photodetector. The photoresponse of the device is controlled by a hole trap in a tunnel barrier. Capture of a single photoinjected hole by the trap gates the device and produces an easily measured current pulse which can be counted by a conventional pulse-counting apparatus. There is only one detectable trap in a photoactive area of (approximately-equal-to)400 μm2. However, due to electric field channeling effects the trap collects photoinjected holes with a 1% efficiency in the active region. The absence of measurable dark counts in a 25 h period at 77 K establishes a minimum detectable photon flux 〈0.001 photons/s at 8200 A(ring).
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1133-1139 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design criteria for large transconductance/high output impedance or high-gain operation of metal-oxide tunneling transistors is given. The dependence of the gate control on the aspect ratio of thickness to width of the tunneling oxide is investigated by computer simulation. This device structure can only operate similar to conventional semiconductor transistors for aspect ratio considerably less than one. It ceases to function as a transistor for larger aspect ratio due to insufficient penetration of the gate control field into the tunneling oxide. To demonstrate this, the current–voltage characteristics are computed for aspect ratios equal to 7/30, 1, 21/10, and the different tunneling-current behaviors compared with our experimental results on Ti/TiOx/Ti and Nb/NbOx/Nb tunnel transistors.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2124-2126 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient band-gap electroluminescence has been observed in n+-n−-n+ single-barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field dependence of the impact ionization rate is determined. Comparisons to theory are made.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1378-1382 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage pulsed modification of surfaces in air with a scanning tunneling microscope has been studied with a view to understanding the physical processes involved. Incremented negative pulses have been applied to a tungsten tip to determine the threshold for feature writing on gold. The primary event observed with virgin tips is pit formation, which is interpreted as due to the transfer of gold cations from sample to tip. Subsequent pulsing establishes a threshold for a secondary process in which hillocks form on the gold surface and which are thought to be the result of gold anion retransfer from tip to sample. The thresholds are 4.16 and 3.92 V, respectively, for the two processes. For one particular tip, which gave rise to a Y-shaped pit, a three-dimensional profile was subsequently obtained by crashing it at a remote site on the surface and imaging the crater formed. The geometrical parameters of the tip, so elaborated, allowed a model of the electrostatic potential between tip and sample during pulsing to be numerically evaluated by solution of Laplace's equation and the field pattern over the surface to be determined. For the blunt pyramid involved, there is substantial anisotropy though modest field reduction at positions some nm from the projection of the tip on the surface. It is then a straightforward matter to understand the Y shape of the pit formed on the surface by the initial pulse. Field evaporation is thereby confirmed as the operative process. Reference experiments using gold tips showed no threshold difference between primary and secondary modification, a result consistent with the field evaporation mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1109-1111 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process for patterning ultrathin layers of PtSi with high spatial resolution is presented. In this process, scanned probe anodic oxidation is used to pattern a surface oxide layer on a H-passivated Si surface. This oxide pattern prevents the reaction of a deposited Pt film with the underlying Si in the formation of PtSi. The unreacted Pt on the oxide is removed by a selective etch before any annealing. This process greatly reduces lateral diffusion and produces a 2-nm-thick PtSi layer with good electrical properties that maintains the fidelity of the patterned oxide mask. Such nanostructured PtSi films are a good candidate for use in constructing lateral Si-based quantum devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1782-1784 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the kinetics of scanned probe oxidation under conditions of high humidity and pulsed bias. For a hydrophobic Si surface the oxidation rate for short pulse times (∼10 ms) is controlled by the density of H2O molecules in the ambient humidity surrounding the tip-sample interface. At longer pulse times (∼0.1 s) liquid H2O bridges this interface and the maximum oxidation rate increases by a factor of ∼104 because of the increased density of H2O molecules. We propose that the rate-limiting step of the oxidation process is the production of O anions from the ambient humidity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1476-1478 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple high-speed process for patterning metal silicides with an atomic force microscope (AFM). The process uses a thin AFM-generated oxide to block Pt diffusion during the formation of Pt silicide. Because the process requires only ∼1 nm of oxide, high write speeds and fine lateral resolution are achieved. We find that by maintaining ambient moisture at the tip–sample interface we can under optimal tip conditions achieve a minimum exposure time of ∼300 ns for a 30 nm size pixel which corresponds to a maximum write speed of ∼10 cm/s. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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