ISSN:
0392-6737
Keywords:
Optoelectronic devices
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary A first structural investigation, carried out by transmission electron microscopy on porous-silicon samples fromp +, 〈111〉-oriented substrates is presented. The samples, which show intense visible room temperature luminescence, are composed by an interconnected network of crystalline nanostructures. Evidences of the pores propagation along the 〈100〉 directions are provided. The optical and morphological characteristics of the investigated samples are found to be much similar to those of samples coming fromp-type, non-degenerate, 〈100〉-oriented substrates rather than those obtained from 〈100〉 substrates with comparable resistivity. This striking effect is explained by invoking different etch-limiting mechanisms during pore formation. Their relative weights are proposed to depend on the crystallographic orientation of the silicon specimen subjected to etching.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02464701
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