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  • 1
    Electronic Resource
    Electronic Resource
    Study on Zn-, Cd-, or Hg-addition into TlBaCuO (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5289-5292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nominal ZnTlBaCuO4.5, CdTlBaCuO4.5, and HgTlBaCuO4.5 samples have been prepared under different conditions and have been studied by resistance and ac-susceptibility measurements compared to nominal TlBaCuO3.5 samples. In general, the ZnTlBaCuO4.5 samples required less strict heating conditions to reach zero resistance near liquid nitrogen temperature; the CdTlBaCuO4.5 samples had lower Tc; the HgTlBaCuO4.5 samples showed slightly improved Tc at certain conditions. In contrast to La2−xSrxCuO4, Zn-addition did not significantly depress Tc of TlBaCuO. This observation is worthy to be investigated further. Hardness of the ZnTlBaCuO4.5 and CdTlBaCuO4.5 samples was greatly increased, which could have importance in the practical applications of these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347020
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth and structural properties of HgCdTe layers on CdTe(211)B/Si(211) substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 115-119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of Hg1−xCdxTe on CdTe(211)B/Si(211) substrates by molecular beam epitaxy are comprehensively studied by in situ reflection high energy electron diffraction and transmission electron microscopy. Microtwins are observed to be formed at the interface, but are overgrown later as the growth proceeds. It is shown that the three-dimensional growth at the nucleation stage of HgCdTe on CdTe(211)B/Si and CdZnTe(211)B is more likely due to the higher surface energy of Hg1−xCdxTe than that of CdTe(211)B and CdZnTe(211)B. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373631
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of annealing on the grain growth and luminescent properties of SrS:Cu blue phosphors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3999-4002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Systematic studies of the postgrowth annealing of molecular beam epitaxial deposited SrS:Cu films are reported. In the as-grown SrS:Cu films, the grain size was small and the luminescence very weak. A step-annealing procedure in a H2S atmosphere was developed and found to be a very efficient way to improve the crystallinity and luminescent properties without damage to the low temperature glass substrate and insulator layer of the device. A model is presented in terms of the free energy of formation and the reaction kinetics of Cu with H2S. It was proposed that the weak luminescence in the as-grown films was attributed to Cu atoms segregated at the grain boundaries in the SrS film. The oxidation of atomic Cu by H2S and the diffusion of Cu+ into the SrS lattice during annealing were responsible for the grain growth and the improved luminescent properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370303
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of the evolution of single domain (111)B CdTe films by molecular beam epitaxy on miscut (001)Si substrate (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4292-4299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive view of the microstructure of (111)B CdTe films grown on miscut (001)Si substrates by molecular beam epitaxy has been obtained by transmission electron microscopy and scanning transmission electron microscopy. It is found that in the initial growth stage, CdTe nucleates with a dominance of one particular domain: a domain with (111)B polarity and orientation of [11−2]CdTe//[1−10]Si, although there are also some other domains of different polarity and orientation. The dominance of one type domain is due to the reduction of the surface symmetry by using the miscut substrate and by using optimum growth conditions. As the growth proceeds, a single-crystal film is produced by the dominating domain overgrowing the minority domains nucleated at the film–substrate interface. This results in the final film of single-crystal character having (111)B polarity with [11−2]CdTe along [1−10]Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368647
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  • 5
    Electronic Resource
    Electronic Resource
    Computer-controlled thermoelectric power measurement for bulk high Tc superconductors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2263-2267 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have established a quick and easy, modified dc method to measure thermoelectric power for bulk high transition-temperature (Tc) superconductors. The temperature range investigated is from 300 to 50 K. The apparatus was developed on the basis of our already-existing commercial APD (APD CRYOGENICS INC, Allentown, Pennsylvania) superconductor characterization cryostat with a limited amount of extra instrumentation. The thermoelectric power is measured continuously within the temperature range by the control of a computer, a real time Seebeck coefficient S(T) versus temperature curve is plotted on the computer screen during the measurement, and the data can be saved to a disk. The entire processing period for each sample takes less than 2 h. This apparatus was calibrated with pure lead. By measuring on high Tc superconductors which are well known in thermoelectric power, the system has been shown to have high accuracy and reliability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143148
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of c-oriented HgBa2Ca2Cu3O8+δ superconducting thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2866-2868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Hg-based cuprate thin films have been fabricated on (100) SrTiO3 substrate using rf sputtering and post-Hg-vapor annealing. These films are dominated by c-axis-oriented Hg-1223 phase as indicated by x-ray diffraction and SQUID measurements. Using four-probe technique, the Tc,onset was found to be 130–132 K and Jc was up to 8.5×104 A/cm2 at 77 K and zero field. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114811
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  • 7
    Electronic Resource
    Electronic Resource
    In situ annealing studies of molecular-beam epitaxial growth of SrS:Cu (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1379-1381 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing studies are reported on molecular-beam epitaxial grown SrS:Cu which has potential as a blue phosphor for full color electroluminescent (EL) displays. It was found that annealing under a sulfur flux at 650 °C greatly improved film quality and luminescent brightness. This was attributed to the reduction of sulfur vacancies, and a large enhancement in the grain size of these thin-film phosphors. Using this procedure, EL devices with a luminance of 26 cd/m2 at 40 V above the turn-on threshold voltage with chromaticity coordinates of x=0.17, y=0.29 were obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123556
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  • 8
    Electronic Resource
    Electronic Resource
    Domain boundaries in epitaxial wurtzite GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1308-1310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double positioning boundaries on {12¯10} and {11¯00} planes in wurtzite GaN epilayer grown by molecular beam epitaxy on {1¯1¯1¯}B GaP are described. Transmission electron microscopy observations demonstrate that the {12¯10} boundary extending a short distance along the c axis is characterized by a displacement of 1/2〈101¯1〉 and is associated with single growth faults in the basal plane. This boundary forms as a consequence of island coalescence. Conversely, the {11¯00} boundary originates at the epilayer/substrate interface and runs through the whole epilayer, while g.R analysis combined with high resolution electron microscopy suggests a displacement of 1/3n〈112¯0〉 (n〉3) in the basal plane with an additional shift along 〈0001〉 of 1/n〈0001〉(n〉3). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118520
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  • 9
    Electronic Resource
    Electronic Resource
    CdTe(111)B grown on Si(111) by molecular beam epitaxy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2346-2348 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the growth of large-area, domain-free CdTe(111)B single crystals on As-passivated Si(111) substrates by molecular beam epitaxy using ZnTe buffer layers. The crystal quality of the CdTe(111)B/ZnTe(111)B/Si(111) films was examined by x-ray diffraction (56 arcs), etch-pit-density (2×105 cm−2) analysis, and transmission electron microscopy, and was found to be comparable to or better than the best CdTe(111)B films grown directly on vicinal Si(001). Surface reconstructions were observed by reflection high-energy electron diffraction at different stages. Diffraction intensity oscillations demonstrated the layer-by-layer growth mode of the CdTe surface. An interface model for these films is proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123846
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  • 10
    Electronic Resource
    Electronic Resource
    Direct observation of the core structures of threading dislocations in GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2680-2682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Here we present the first direct observation of the atomic structure of threading dislocation cores in hexagonal GaN. Using atomic-resolution Z-contrast imaging, dislocations with edge character are found to exhibit an eight-fold ring core. The central column in the core of a pure edge dislocation has the same configuration as one row of dimers on the {10-10} surface. Following recent theoretical work, it is proposed that edge dislocations do not have deep defect states in the band gap, and do not contribute to cathodoluminescence dislocation contrast. On the other hand, both mixed and pure screw dislocations are found to have a full core, and full screw dislocation cores were calculated to have states in the gap. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121097
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