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Variation in growth form in relation to spectral light quality (red/far-red ratio) in Plantago lanceolata L. in sun and shade populations (1997)

van Hinsberg, Arjen ; van Tienderen, Peter

Springer

Oecologia 111 (1997), S. 452-459

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ISSN: 1432-1939

Keywords: Key words Phenotypic plasticity ; Shade avoidance

Source: Springer Online Journal Archives 1860-2000

Topics: Biology

Notes: Abstract Plants from a sun and shade population were grown in two environments differing in the ratio of red to far-red light (R/FR ratio). A low R/FR ratio, simulating vegetation shade, promoted the formation of long, upright-growing leaves and allocation towards shoot growth, whereas a high R/FR ratio had the opposite effects. The increase in plant height under the low R/FR ratio was accompanied by a reduction in the number of leaves. Population differences in growth form resembled the differences between plants grown in different light environments: plants from the shade population had rosettes with long erect leaves, whereas plants from the sun population formed prostrate rosettes with short leaves. Plants from the shade population were more responsive to the R/FR ratio than plants from the sun population: the increases in leaf length, plant height, and leaf area ratio under a low R/FR ratio were larger in the shade population. However, differences in plasticity were small compared to the population difference in growth form itself. We argue that plants do not respond optimally to shading and that developmental constraints might have limited the evolution of an optimal response.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s004420050258

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193 nm resists and lithography (1994)

Kunz, Roderick R. ; Allen, Robert D. ; Hartney, Mark A. ; [et al.]

New York, NY : Wiley-Blackwell

Polymers for Advanced Technologies 5 (1994), S. 12-21

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ISSN: 1042-7147

Keywords: Photoresists ; Lithography ; Argon fluoride excimer laser ; Surface imaging ; Silylation ; Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Notes: A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface-imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2.

Additional Material: 10 Ill.