ISSN:
1433-0768
Keywords:
Key words SiGe heterointerface
;
Thermal interdiffusion
;
Dislocation
;
DCXD
;
MBE growth
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract The interdiffusion in a low-strained Si0.93Ge0.07/Si epilayer was analyzed by double-crystal X-ray diffraction. The interdiffusion was characterized by a low diffusion barrier of 1.81 eV with a diffusion constant of 4.3 × 10−5 cm2/sec, which indicates correlation with the stacking fault generated by the homoepitaxial growth of the Si layer prior to the growth of the strained SiGe layer. At the very low-strained layer, the driving force causing the interdiffusion is the concentration gradient, and the mechanism is self-diffusion of Si. Furthermore, the interdiffusion mechanisms were classified into three groups, depending on the Ge mole fraction x. For x 〈 0.2, the diffusion process in the SiGe alloy is similar to a self-diffusion of Si atoms, while, for 0.2 〈 x 〈 0.4, Ge atoms prefer to be diffused out from the alloy. Finally, for x 〉 0.4, Si atoms can be diffused into the alloy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s100080050052
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