ISSN:
1434-6036
Keywords:
PACS. 73.25.+i Surface conductivity and carrier phenomena – 73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures – 74.70.Wz Fullerenes and related materials
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract: We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer for doping higher than ∼ 0.3 electron (or hole) per C60 molecule. The morahedral disorder of the C60 molecules smoothens the structure in the density of states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s100510170054
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