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High resistivity layers of GaAs grown by liquid phase epitaxy (1975)

Schlachetzki, A. ; Salow, H.

Springer

Applied physics 7 (1975), S. 195-201

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ISSN: 1432-0630

Keywords: GaAs ; Liquid phase epitaxy ; High resistivity layers

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The preparation of high-resistivity undoped GaAs layers is described. The layers were epitaxially grown from the liquid phase on semi-insulating GaAs substrates. Up to 106 Ωcm in resistivity were obtained. The layers are highly compensated. Their temperature behaviour resembles that of Cr-doped semi-insulating bulk material. Additionally it is reported on the doping effect of Cr, Fe, Co, and Ni in the liquid phase epitaxy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00936024

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