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  • Metal-organic chemical vapour deposition  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Metal-Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 229-233 
    Details
    ISSN: 1057-9257
    Keywords: Indium sulphide ; Metal-organic chemical vapour deposition ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The dimeric indium thiolate [(tBu)2In(μ-StBu)]2 has been used as a single-source precursor for the metal-organic chemical vapour deposition (MOCVD) of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the non-equilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy-dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010504
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The preparation of (Al2O3)x(SiO2)y thin films using [al(OSiEt3)3]2 as a single-source precursor (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 3-15 
    Details
    ISSN: 1057-9257
    Keywords: Alumina ; Silica ; Aluminosilicate ; Metal-organic chemical vapour deposition ; Thin film ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Amorphous (Al2O3)x(SiO2)y thin films have been grown by atmospheric pressure metal-organic chemical vapour deposition using the single-source precursor [Al(OSiEt3)3]2. Characterisation by X-ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2 and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3 as the carrier gas resulted in the increased volatility of the precursor by the in situ formation of the low-melting Lewis acid-base adduct Al(OSiEt3)3(NH3); however, no nitrogen incorporation was observed in these deposited films.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010103
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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