ISSN:
1432-0630
Keywords:
PACS: 78.55. Cr
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. A detailed analysis of PhotoLuminescence spectroscopy (PL) on undoped and Te- and Zn-doped samples of high-quality GaSb is presented. Temperature variations of PL peak position and intensity have been used to find the origin of various transitions. The PL peaks of undoped samples have been assigned to unintentional impurities, native defects and excitons bound to the defect. The zinc- and tellurium-related peaks have been identified and the effect of doping concentration on their position and PL efficiency have been studied.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050182
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