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  • PACS. 73.23.Hk Coulomb blockade; single-electron tunneling - 73.40.Rw Metal-insulator-metal structures  (1)
  • ex-situ thin film processing  (1)
  • radio frequency  (1)
Source
Material
Years
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Preparation and properties of Tl2Ba2CaCu2O8 thin films (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 767-771 
    Details
    ISSN: 1572-9605
    Keywords: Tl cuprates ; thin films ; ex-situ thin film processing
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Anex situ process has been developed to produce thin superconducting Tl2Ba2CaCu2O8 films. The properties of films grown on different substrates using different annealing regimes were studied. Critical temperatures of 103–107 K were measured on films prepared in a broad range of annealing temperatures on SrTiO3, LaAlO3, and Y-ZrO2 substrates. A critical current density,J c, of 2×106 A/cm2 at 77 K was measured on LaAlO3. Film morphology was studied by SEM, AFM, and STM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00721661
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Radio Frequency-Single Electron Transistor: A Fast and Sensitive Electrometer Analogous to the Radio Frequency-Superconducting Quantum Interference Device (1999)
    Springer
    Journal of superconductivity 12 (1999), S. 741-746 
    Details
    ISSN: 1572-9605
    Keywords: coupling circuit ; radio frequency ; RF-SQUID ; single electronics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We describe a new mode of operation of the single electron transistor (SET). The so-called RF-SET (radio frequency-SET) is a dual of the RF-SQUID (radio frequency-superconducting quantum interference device). It has been operated at frequencies above 100 MHz with a very high charge sensitivity (1.2 × 10−5 e/√Hz. The large bandwidth, combined with a high sensitivity, will enable studies of the dynamics of mesoscopic systems on very short time scales.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007728908729
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Bias and temperature dependence of the noise in a single electron transistor (1999)
    Springer
    The European physical journal 8 (1999), S. 627-633 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 73.23.Hk Coulomb blockade; single-electron tunneling - 73.40.Rw Metal-insulator-metal structures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: A single electron transistor based on Al-AlOx-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range (1-300) Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main noise contribution comes from fluctuations at the input of the transistor. Deviations from ideal input charge noise behaviour are found in the form of a bias dependence of the differential charge equivalent noise, i.e. the derivative of current noise with respect to gain. The temperature dependence of this effect could indicate that heating is activating the noise sources, and that they are located inside or in the near vicinity of the junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050730
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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