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  • Photochemical deposition  (1)
  • supersonic jets  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Molecular engineering 6 (1996), S. 347-362 
    ISSN: 1572-8951
    Keywords: Photochemical deposition ; Silicon thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract We have investigated the mechanism of silicon thin film deposition by ArF excimer laser irradiation of silane gas diluted with argon. The Si films were deposited by a focused laser beam irradiating in parallel to silicon and silicon dioxide substrates at a gas flow rate of 20 SCCM, total pressure of 60 Torr and repetition rate of 15 Hz. At laser energy fluences higher than 160 mJ/cm2 the deposition rate was almost independent of the incident laser energy, while at a lower energy the deposition rate depended strongly on the laser energy. A 3/2 power law was found for absorption measurements carried out at the same pressure under flow conditions and for several repetition rates at average laser power above 300 mW, regardless of the laser repetition rate. This kind of behavior is typical of a multiphoton absorption process involving saturation effects caused by focusing of the laser beam. Below 300 mW the power dependence indicated a two-photon absorption process. From the observed photochemical yield we found the value 5.7×10-44 cm4 s molec-1 for the two-photon absorption cross section. A Gaussian-shaped transverse thickness distribution of the deposited layer was obtained with a maximum value corresponding to the center of the laser beam spatial profile. This distribution depended on the deposition parameters, and was attributed to the diffusion process of silane decomposition products in the gas phase in the substrate. Analysis of the adsorption features of the process showed that the major product adsorbed on the substrate surface is silicon. An Arrhenius plot of the deposition rate versus the substrate temperature exhibits two regimes, each associated with a different activation energy. Between 340°C and 460°C the activation energy is 0.25–0.3 e. V, while between 500°C and 560°C it is 1.1 e. V. The activation energy in the higher temperature regime is similar to that found for thermal nonlaser assisted chemical vapor deposition. However, in the lower temperature regime the deposition process is mainly laser induced, and the value of the activation energy is due to the process of adsorption of the gas species on the substrate.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1573-4994
    Keywords: Laser-induced fluorescence ; supersonic jets ; dinaphthalenes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present studies of interchromophore interactions under supersonic jet conditions in a large number of dinaphthyl bichromophoric molecules by measuring their laser-induced fluorescence (LIF) excitation spectra. The molecules are composed of two naphthalene chromophores connected by an n-methylene bridge. The length of the bridge was varied as a function of the number of methylene units (n = 0, 1, 2, 4, 6), of the general type NnN(i,j′), were N denotes naphthalene moiety, n the number of methylene units in the bridge, and (i,j′) are the α or β positions of the bridge at each of the chromophores. We obtained high-quality LIF spectra of these bichromophoric olecules. In the molecules N1N(2,2′), N1N(1,2′), N2N(2,2′), and N2N(1,2′), the spectrum is characterized by an intense 0–0 region, with series of low-frequency progressions. These progressions are assigned as vibrational modes of the bridge. The appearance of several series of progressions is explained either by the excitation of different chromophores (in the mixed molecules) or by the excitation of different populated conformers. The spectrum of N4N(1,1′) is different in several aspects from these spectra. The origin is shifted farther to the red, to 31,402 cm−1. Low-frequency progressions or other transitions are not observed near the origin, but typical intrachromophore naphthalene vibrations are intense. The spectra of N6N(1,1′) and N6N(2,2′) are also characterized by intense intrachromophore vibrations, however, the spectrum of N6N(2,2′) is very complicated due to many populated conformations, while that of N6N(1,1′) is more simple.
    Type of Medium: Electronic Resource
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