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  • Polymer and Materials Science  (6)
  • TEM cross sections  (1)
  • 1
    Electronic Resource
    Electronic Resource
    TEM studies of oxidized NiAl and Ni3Al cross sections (1989)
    Springer
    Oxidation of metals 31 (1989), S. 431-452 
    Details
    ISSN: 1573-4889
    Keywords: aluminides ; oxidation ; TEM cross sections
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Cross sections of oxide scale/(Ni-Al) intermetallics were prepared by a new method and studied using primarily transmission electron microscopy (TEM). The cross sections were prepared by encasing an oxidized metal specimen sandwich in a low-melting-temperature zinc alloy. Observations of oxidized zirconium-doped β-NiAl cross sections revealed crystallographic voids beneath an adherent Al2O3 scale. The oxide-metal interface was incoherent, but a high dislocation density in the metal near the interface suggested that a large tensile stress was induced by the attached oxide scale. A duplex Al2O3-NiAl2O4 scale formed on zirconium-doped and zirconium/boron-doped γ′-Ni3Al alloys. Additional results are presented involving oxidation mechanisms and oxide-metal interface structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00666466
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of Y and Zr on the Oxidation of NiAl (1996)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 47 (1996), S. 631-632 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Der Einfluß von Y und Zr auf die Oxidation von NiAl
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19960471107
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  • 3
    Electronic Resource
    Electronic Resource
    Segregation studies of oxidized Y and Zr doped NiAlDedicated to Professor Dr. H. J. Grabke on the occasion of his 60th birthday (1995)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 46 (1995), S. 218-222 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Untersuchungen zur Segregation von Y und Zr bei der Oxidation von NiAlKonventionelle, analytische und hochauflösende Transmissionselektronenmikroskopie (TEM) sowie hochauflösende Sekundärionenmassenspektrometrie (SIMS) wurden benutzt, um den Effekt von reaktiven Elementen auf die Oxidation von NiAl zu untersuchen. Polykristalline NiAl-Proben, dotiert mit 0,1 Mas.-% Y oder 0,2 Mas.-% Zr, wurden bei einer Temperatur von 1200°C oxidiert. 18O Tracer-Experimente in Verbindung mit hochauflösenden SIMS-Untersuchungen deuten darauf hin, daß reaktive Elemente die nach außen gerichtete Diffusion von Kationen reduzieren. Energiedispersive Röntgenspektroskopie mit einem dedizierten STEM zeigte, daß die reaktiven Elemente an den Korngrenzen in der Oxidschicht und an der Metall/Oxid-Grenzfläche segregieren. Der Anteil von Y bzw. Zr an den Korngrenzen in der Oxidschicht beträgt 0,2 Monolagen. Demgegenüber wurden an der Metall/Oxid-Grenzfläche 0,15 Monolagen (Zr-dotiert) bzw. 0,07 Monolagen (Y-dotiert) gefunden. In Y-reichen Teilchen im NiAl nahe der Metall/Oxid-Grenzfläche konnte Schwefel nachgewiesen werden.
    Notes: Conventional electron microscopy, analytical electron microscopy, high resolution electron microscopy and high resolution SIMS have been used to investigate the effect of the reactive elements, Yand Zr, on the oxide scale formation on NiAl. Polycrystalline NiAl samples, doped with either 0. 1 wt% Yor 0.2 wt% Zr, were oxidized in air at 1200°C. 18O tracer experiments in conjunction with high resolution SIMS suggest that the reactive elements reduce the outward diffusion of cations. Energy dispersive X-ray spectroscopy on a dedicated STEM showed that the reactive elements segregate to the grain boundaries in the oxide scale and to the metal/oxide interface. The amount at the oxide scale grain boundaries was calculated to be 0.2 monolayers for both Zr and Y doped NiAl. The amounts of segregation were calculated to be 0.15 monolayers (Zr-doped) and 0.07 monolayers (Y-doped) at the metal/oxide interface. The presence of sulfur was detected in Y-rich particles in the NiAl close to the interface.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19950460405
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  • 4
    Electronic Resource
    Electronic Resource
    Development and microstructure of the Al-depleted layer of oxidized TiAl (1997)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 48 (1997), S. 23-27 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Entwicklung und Mikrostruktur der Verarmungszone bei der Oxidation von TiAlDie Mikrostruktur und Entwicklung der bei der Oxidation von γ-TiAl entstehenden Oxidschicht ist mit Hilfe metallographischer und elektronenmikroskopischer Querschnitte untersucht worden. Ti-50(at.%)Al wurde bei 900°C in Luft für verschiedene Zeiten isotherm oxidiert und speziell die Entwicklung der Metall/Oxid-Grenzfläche untersucht. Eine an Al verarmte Metallrandzone hat sich nach 1 h Oxidation gebildet und entwickelt sich mit zunehmender Oxidationszeit von einer einphasigen in eine zweiphasige Schicht. Die einphasige Schicht ist bis 100 h vorhanden und besteht aus einer primitiv kubischen Phase mit Gitterparameter a 0,692 nm. Nach 140 h Oxidation liegt α2-Ti3Al in der Verarmungszone neben der kubischen Phase vor. Beide Phasen besitzen einen geringeren Al-Gehalt als die Ausgangslegierung. Ebenso konnte Sauerstoff in beiden Phasen nachgewiesen werden, wobei die kubische Phase mehr Al and O enthält als α2-Ti3Al. Die metallographischen Querschliffe zeigen die Bildung von α2-Ti3Al an der Grenzfläche γ-TiAl/Verarmungszone mit einem anschließenden Wachstum in die kubische Phase der Verarmungszone.
    Notes: The microstructure and development of the scale of oxidized γ-TiAl were studied in cross section by electron microscopy and metallographic techniques. Ti-50(at.%)Al samples were oxidized at 900°C in air for various times and especially the evolution of the scale/metal interface was investigated. The formation of the aluminium deplete d subsurface layer could be observed after 1 h and develops from a single phase to a two phase region with longer exposure times The single phase region is visible up to 100 h and consists of a simple cubic phase with lattice parameter a = 0.692 nm. After an oxidation time of 140 h the formation of a two phase region consisting of and the cubic phase occurred. Both phases are depleted in aluminium compared to the base metal and contain some amount of oxygen whereby the cubic phase contains more Al and O than α2-Ti3Al. The metallographic cross sections suggest that the α2-Ti3Al phase forms at the -γ-TiAl/cubic-phase interface and grows into the cubic phase.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19970480105
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  • 5
    Electronic Resource
    Electronic Resource
    Sintering - New Developments. (Materials Science Monographs, Vol. 4). Von M. M. Ristißc. Elsevier Scientific Publishing Company, Amsterdam - Oxford - New York 1979. 1. Aufl., X, 380 S., zahlr. Abb. u. Tab., geb., $ 83.00 (1979)
    Weinheim : Wiley-Blackwell
    Chemie Ingenieur Technik - CIT 51 (1979), S. 1258-1258 
    Details
    ISSN: 0009-286X
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cite.330511225
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  • 6
    Electronic Resource
    Electronic Resource
    Neural pattern recognition applied to AES depth profiling (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 809-814 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Neural pattern recognition was used to analyse the low-energy Auger spectra of a thermally annealed Si/Ni/Si layered structure measured during the acquisition of a depth profile. The purpose was to gain information about the chemical state of the elements at the interfaces by processing the data in a way quite similar to conventional target factor analysis (TFA). The new approach, however, has some important advantages: no standards are required, it is extremely fast and it is fully automatic. In principle, there is only one arbitrary parameter, the vigilance parameter ρ, which sets a threshold for the level of similarity required for assuming two spectra as belonging to the same class of data. However, the requirement that the optimal value for ρ should correspond to the maximal correlation between the experimental data set and the recalculated spectra makes the system also robust against misconclusions based on subjective interpretation of the data set, which is not always the case in TFA.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740231203
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  • 7
    Electronic Resource
    Electronic Resource
    Interdiffusion at the Al2O3/Ti interface studied in thin-film structures Dedicated to Professor Siegfried Hofmann on the occasion of his 60th birthday. (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 861-867 
    Details
    ISSN: 0142-2421
    Keywords: AES depth profiling ; XPS ; metal/oxide thin-film structures ; Al2O3/Ti interface ; interdiffusion ; interfacial reactions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The early-stage interfacial reactions between amorphous Al2O3 (a-Al2O3) and crystalline α-Ti (c-Ti) thin films were studied in thin-film structures with two different thicknesses. Smooth silicon (111) substrates were covered firstly with a TiN thin-film diffusion barrier and then with a crystalline Ti layer. Finally, amorphous Al2O3 was sputter deposited onto the crystalline Ti layer. The samples were heated in a differential scanning calorimeter with a linear heating rate of 40°C min-1 - from room temperature up to different final temperatures of 350-700°C in an argon atmosphere to activate reactions at the a-Al2O3/c-Ti interfaces - and then rapidly quenched. The interdiffusion at the a-Al2O3/c-Ti interface was studied using the rate of change of the reaction width obtained from Auger electron spectroscopy (AES) sputter depth profiles. The beginning of the reaction, which involves the diffusion of oxygen (followed by Al) into the c-Ti thin film, was observed at ∽425°C. The activation energy at the a-Al2O3/c-Ti interface was found to be 1.6 eV for the oxygen diffusion from the amorphous Al2O3 into the c-Ti thin film between 425°C and 650°C, and 0.9 eV for the Al diffusion between 500°C and 625°C. The new crystalline reaction product is composed of α2-Ti3Al phase and a solid solution of oxygen in α-Ti. The influence of different sample structures on kinetic quantities is discussed. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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