ZIB

Hits per page

hit 1 - 1 | 1 hit

Sorting

Electronic Resource

Quantification of carbon in MOVPE-grown AlAs on GaAs substrates using SIMS (1991)

Maydell, E. A. ; Fabian, D. J. ; Roberts, J. S.

Chichester [u.a.] : Wiley-Blackwell

Surface and Interface Analysis 17 (1991), S. 813-815

add to mindlist on the mindlist

Details

ISSN: 0142-2421

Keywords: Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Physics

Notes: Concentrations of carbon in layer of metal organic vapour phase epitaxy (MOVPE)-grown AIAs on GaAs substrates were determined by SIMS using a Cs+ primary ion beam. The measurements demonstrate that by using an ultrahigh vacuum (UHV)VG quadrupole-based SIMS instrument and thorough outgassing of samples, sputter etching conditions can be established that give C- signals unaffected by residual gas interference, while maintaining good depth resolution.

Additional Material: 2 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/sia.740171110

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit