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  • Polymer and Materials Science  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Determination of the angle of incidence in a Cameca IMS-4f SIMS instrument (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 739-743 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An improved model for the calculation of the angle of incidence of primary ions is presented for describing secondary ion mass spectrometry (SIMS) measurements in the low primary energy region (〈7.5 keV) of a Cameca IMS-4f with positive primary ions and a positive secondary detection mode. The model explains some of the inconsistencies observed between experiment and the approximative model used so far. Our improvement takes into account the effect of the deflection plates for beam positioning, which leads to a change in the angle of the primary ion with respect to the optical axis of the primary column. A comparison with experimental results is accomplished, showing the improvement of the new model. This new model also explains the slope of the crater bottom in the x-direction at low primary ion energies, owing to a different sputter yield from one side to the other of the crater bottom.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740141110
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of cross-contamination during Si-implantion in GaAs with SIMS (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 339-343 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The contamination of Si-implantation in GaAs was analysed with SIMS. This was done by measuring the molecules composed of the ‘contamination-atoms’ and the matrix atoms. It was concluded that there exists a co-implantation of 14N15, 10B19F, 11B18O up to 40% of the dose for the 29Si-implantation in the worst case and 20% of 14N2 for the 28Si-implantation. Electrical measurements and a residual gas analysis confirmed these results. A good mass separation for the implanter was found.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120604
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Quantitative study of background signals from crater edges and surroundings in depth profiling of small areas with secondary ion mass spectrometry (1993)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 206-214 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A theoretical model is presented to calculate the redeposition of ions and neutrals generated during sputter bombardment in a secondary ion mass spectrometry (SIMS) measurement. This model is compared with measurements of boron in silicon in an on-chip geometry, i.e. the analysis of low doping levels of an impurity in an area surrounded by a region that contains high amounts of this impurity. The present results indicate that the ion acceptance profile of the secondary ion beam and the redeposition of ions and neutrals generated during the sputtering form the limiting factors in small-area on-chip analysis. The non-ideal definition of the acceptance profile is solved by superimposing an electronic gate onto the optical gate of the instrument. For the analysis of B in Si and Si in GaAs and AlxGa1-xAs, the use of Cs+ reduces the background signal of the measurement compared with O2+.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740200304
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    Paper (German National Licenses)
    Fulltext
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