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Digitale Medien

MOCVD Route to Chromium Carbonitride Thin Films Using Cr(NEt2)4 as Single-Source Precursor: Growth and MechanismWe gratefully acknowledge M. Nadal for hardness measurements and L. Dumitrescu for assistance in resistivity measurements. (1997)

Ossola, Franco ; Maury, Francis

Weinheim : Wiley-Blackwell

Chemical Vapor Deposition 3 (1997), S. 137-143

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ISSN: 0948-1907

Schlagwort(e): MOCVD ; Chromium carbonitride films ; Hard metallurgical coatings ; Single-source precursor ; Pyrolysis mechanism ; Chemistry ; Polymer and Materials Science

Quelle: Wiley InterScience Backfile Collection 1832-2000

Thema: Chemie und Pharmazie , Maschinenbau

Notizen: Chromium carbonitride coatings with a low nitrogen content were deposited by low pressure MOCVD in the temperature range 573-793 K using Cr(NEt2)4 as single-source precursor. As-deposited films are amorphous and crystallize upon annealing at 873 K to form an orthorhombic ternary phase. They exhibit a high hardness and their resistivity decreases by increasing the growth temperature. This dependence has been correlated to their microstructure. Quantitative 1H NMR analysis of the by-products of the MOCVD reaction has been performed. The quasi-equimolecular ratio of the by-products EtN=CHMe and HNEt2 suggests that most of the NEt2 ligands are removed by a stepwise mechanism, which is discussed.

Zusätzliches Material: 6 Ill.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1002/cvde.19970030305

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Digitale Medien

Low-temperature MOCVD of chromium carbonitride coatings from tetrakis(diethylamido)chromium and pyrolysis mechanism of this single-source precursor (1998)

Maury, Francis ; Ossola, Franco

New York, NY [u.a.] : Wiley-Blackwell

Applied Organometallic Chemistry 12 (1998), S. 189-199

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ISSN: 0268-2605

Schlagwort(e): single-source precursor ; tetrakis(diethylamido)chromium ; pyrolysis mechanism ; MOCVD ; low-temperature deposition ; chromium carbonitride thin films ; hard metallurgical coatings ; Chemistry ; Industrial Chemistry and Chemical Engineering

Quelle: Wiley InterScience Backfile Collection 1832-2000

Thema: Chemie und Pharmazie

Notizen: Amorphous chromium carbonitride coatings with a low nitrogen content (3-8 at%) were deposited by low-pressure MOCVD in the temperature range 573-793 K using Cr(NEt2)4 as single-source precursor. This poor nitrogen incorporation is in agreement with the trends predicted by thermochemical calculations. XPS data, resistivity measurements and annealing experiments suggest that the films grown at 573 K are contaminated by organic species due to incomplete elimination of the ligands. The films deposited at higher temperature crystallize upon annealing at 873 K to form an orthorhombic ternary chromium carbonitride phase. The major volatile by-products of the MOCVD reaction were analyzed by 1H and 13C NMR. Their amount and the quasi-equimolar EtN=CHMe/HNEt2 ratio suggest that most of the NEt2 ligands are removed by a stepwise mechanism which probably occurs with other diethylamido complexes of transition metals when they are used as single-source precursors in MOCVD. The incorporation of the metalloid elements in the film is discussed in comparison with recent literature data. © 1998 John Wiley & Sons, Ltd.

Zusätzliches Material: 4 Ill.

Materialart: Digitale Medien

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