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  • Reversible and irreversible processes  (1)
  • light irradiation  (1)
  • 1
    Digitale Medien
    Digitale Medien
    Weinheim : Wiley-Blackwell
    Electroanalysis 6 (1994), S. 711-724 
    ISSN: 1040-0397
    Schlagwort(e): Theory ; Linear sweep voltammetry ; Reversible and irreversible processes ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Notizen: The theory of the linear sweep voltametric method has been the object of a series of articles in which useful solutions for current versus scan rate (I vs. v) relationships and for the diagnostic criteria for different kinds of reacting systems have been found. Some difficulties remain in order to clarify these concepts. This article is an attempt to introduce clearer ideas about how to deduce I vs. v and I vs. E relationships for the method mentioned above as applied to the study of reversible and irreversible electrochemical processes. Some new equations are given which have been deduced under consideration of the numerical solutions obtained by Nicholson and Shain [4]. Variations of Co(O, t) and CR(O, t) with the potential value have been found, and an unambiguous definition of k°′ for irreversible processes is given, which allows the determination of k° values from linear voltammograms recorded in the study of such processes. Also, the values of δN, the thickness of the diffusion layer, have been calculated as a function of the potential and sweep rate.
    Zusätzliches Material: 4 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 677-682 
    ISSN: 0142-2421
    Schlagwort(e): silicon ; light irradiation ; surface tension ; transmission electron microscopy ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: The morphological differences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structure, due to the presence of narrower outer silicon fibres, which suffer a more severe cracking process upon drying. © 1997 by John Wiley & Sons, Ltd.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
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