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  • SIMS  (1)
  • oxygen precipitates  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Boron implantation in Si: Channeling effects studied by SIMS and simulation (1992)
    Springer
    Microchimica acta 107 (1992), S. 161-169 
    Details
    ISSN: 1436-5073
    Keywords: boron implantation ; channeling ; SIMS
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The axial channeling behaviour of boron implants in 〈100〉, 〈110〉 and 〈111〉 silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the projected range of channeled ions or channeling peak) and the fraction of channeled to implanted ions are observed among the three major crystal orientations. Within the critical angle, the channeling behaviour is very sensitive to the incidence beam angle with respect to crystal orientations. SIMS measurements are performed at different positions along several critical directions over a whole wafer. Well channeled profiles with an incidence beam angle to crystal orientations of 0 ° are obtained for each ion implantation energy and orientation. The results are used to test various models of ion implantation by simulation. A 3-parameter model for electronic stopping power of boron in silicon was proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01244469
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of oxygen precipitates in Czochralski silicon by imaging SIMS (1992)
    Springer
    Microchimica acta 107 (1992), S. 149-160 
    Details
    ISSN: 1436-5073
    Keywords: imaging SIMS ; oxygen precipitates ; Czochralski silicon ; sputter induced roughening
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract This paper presents a three-dimensional characterization of oxygen defects in Czochralski-silicon (CZ) by 3D-SIMS using a camera based imaging system. Different manufacturing processes yielding a variation in size and distribution of oxygen precipitates are monitored by imaging SIMS and conventional depth profiling. Emphasis is laid on the characterization of the precipitation behavior governed by different annealing processes. The limitations of 3D SIMS for oxygen defect imaging are studied. Sputter induced microroughening of the crater bottom, investigated by SEM, is shown to be strongly correlated with defect densities caused by oxygen precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01244468
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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