Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • TEM cross sections  (1)
  • analytical TEM  (1)
  • interdiffusion  (1)
  • 1
    Electronic Resource
    Electronic Resource
    TEM studies of oxidized NiAl and Ni3Al cross sections (1989)
    Springer
    Oxidation of metals 31 (1989), S. 431-452 
    Details
    ISSN: 1573-4889
    Keywords: aluminides ; oxidation ; TEM cross sections
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Cross sections of oxide scale/(Ni-Al) intermetallics were prepared by a new method and studied using primarily transmission electron microscopy (TEM). The cross sections were prepared by encasing an oxidized metal specimen sandwich in a low-melting-temperature zinc alloy. Observations of oxidized zirconium-doped β-NiAl cross sections revealed crystallographic voids beneath an adherent Al2O3 scale. The oxide-metal interface was incoherent, but a high dislocation density in the metal near the interface suggested that a large tensile stress was induced by the attached oxide scale. A duplex Al2O3-NiAl2O4 scale formed on zirconium-doped and zirconium/boron-doped γ′-Ni3Al alloys. Additional results are presented involving oxidation mechanisms and oxide-metal interface structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00666466
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    High-resolution SIMS and analytical TEM evaluation of alumina scales onβ-NiAl containing Zr or Y (1996)
    Springer
    Oxidation of metals 46 (1996), S. 37-49 
    Details
    ISSN: 1573-4889
    Keywords: high-resolution SIMS ; analytical TEM ; alumina scales ; Zr and Y segregation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract High-resolution SIMS and TEM have been used to evaluate growth processes and interfacial segregation occurring in α-Al2O3 scales grown at 1200°C on β-NiAl containing zirconium or yttrium.18O/SIMS shows that the extent of aluminum diffusion occurring during α-Al2O3 growth is reduced by the presence of these alloying elements, which are seen by SIMS imaging as oxide particles within the scale. STEM/EDS of the same oxide scales show that zirconium and yttrium also segregated to the oxide-alloy interface to the extent, respectively, of ≈0.15 and ≈0.07 of a monolayer and to oxide grain boundaries (≈0.2 monolayer). The complementary information provided by SIMS, TEM, and STEM provides a better understanding of the role of “reactive elements” in modifying scale-growth processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01046883
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Interdiffusion at the Al2O3/Ti interface studied in thin-film structures Dedicated to Professor Siegfried Hofmann on the occasion of his 60th birthday. (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 861-867 
    Details
    ISSN: 0142-2421
    Keywords: AES depth profiling ; XPS ; metal/oxide thin-film structures ; Al2O3/Ti interface ; interdiffusion ; interfacial reactions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The early-stage interfacial reactions between amorphous Al2O3 (a-Al2O3) and crystalline α-Ti (c-Ti) thin films were studied in thin-film structures with two different thicknesses. Smooth silicon (111) substrates were covered firstly with a TiN thin-film diffusion barrier and then with a crystalline Ti layer. Finally, amorphous Al2O3 was sputter deposited onto the crystalline Ti layer. The samples were heated in a differential scanning calorimeter with a linear heating rate of 40°C min-1 - from room temperature up to different final temperatures of 350-700°C in an argon atmosphere to activate reactions at the a-Al2O3/c-Ti interfaces - and then rapidly quenched. The interdiffusion at the a-Al2O3/c-Ti interface was studied using the rate of change of the reaction width obtained from Auger electron spectroscopy (AES) sputter depth profiles. The beginning of the reaction, which involves the diffusion of oxygen (followed by Al) into the c-Ti thin film, was observed at ∽425°C. The activation energy at the a-Al2O3/c-Ti interface was found to be 1.6 eV for the oxygen diffusion from the amorphous Al2O3 into the c-Ti thin film between 425°C and 650°C, and 0.9 eV for the Al diffusion between 500°C and 625°C. The new crystalline reaction product is composed of α2-Ti3Al phase and a solid solution of oxygen in α-Ti. The influence of different sample structures on kinetic quantities is discussed. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...