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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 31 (1989), S. 431-452 
    ISSN: 1573-4889
    Keywords: aluminides ; oxidation ; TEM cross sections
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Cross sections of oxide scale/(Ni-Al) intermetallics were prepared by a new method and studied using primarily transmission electron microscopy (TEM). The cross sections were prepared by encasing an oxidized metal specimen sandwich in a low-melting-temperature zinc alloy. Observations of oxidized zirconium-doped β-NiAl cross sections revealed crystallographic voids beneath an adherent Al2O3 scale. The oxide-metal interface was incoherent, but a high dislocation density in the metal near the interface suggested that a large tensile stress was induced by the attached oxide scale. A duplex Al2O3-NiAl2O4 scale formed on zirconium-doped and zirconium/boron-doped γ′-Ni3Al alloys. Additional results are presented involving oxidation mechanisms and oxide-metal interface structures.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1573-4889
    Keywords: high-resolution SIMS ; analytical TEM ; alumina scales ; Zr and Y segregation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract High-resolution SIMS and TEM have been used to evaluate growth processes and interfacial segregation occurring in α-Al2O3 scales grown at 1200°C on β-NiAl containing zirconium or yttrium.18O/SIMS shows that the extent of aluminum diffusion occurring during α-Al2O3 growth is reduced by the presence of these alloying elements, which are seen by SIMS imaging as oxide particles within the scale. STEM/EDS of the same oxide scales show that zirconium and yttrium also segregated to the oxide-alloy interface to the extent, respectively, of ≈0.15 and ≈0.07 of a monolayer and to oxide grain boundaries (≈0.2 monolayer). The complementary information provided by SIMS, TEM, and STEM provides a better understanding of the role of “reactive elements” in modifying scale-growth processes.
    Type of Medium: Electronic Resource
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