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  • TEM-preparation  (1)
  • affine hyperplane arrangement  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of algebraic combinatorics 1 (1992), S. 283-300 
    ISSN: 1572-9192
    Keywords: matroid ; β-invariant ; broken-circuit complex ; shellability ; affine hyperplane arrangement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract The broken-circuit complex is fundamental to the shellability and homology of matroids, geometric lattices, and linear hyperplane arrangements. This paper introduces and studies the β-system of a matroid, βnbc(M), whose cardinality is Crapo's β-invariant. In studying the shellability and homology of base-pointed matroids, geometric semilattices, and afflne hyperplane arrangements, it is found that the β-system acts as the afflne counterpart to the broken-circuit complex. In particular, it is shown that the β-system indexes the homology facets for the lexicographic shelling of the reduced broken-circuit complex $$\overline {BC} (M)$$ , and the basic cycles are explicitly constructed. Similarly, an EL-shelling for the geometric semilattice associated with M is produced,_and it is shown that the β-system labels its decreasing chains.Basic cycles can be carried over from $$\overline {BC} (M)$$ The intersection poset of any (real or complex) afflnehyperplane arrangement Α is a geometric semilattice. Thus the construction yields a set of basic cycles, indexed by βnbc(M), for the union ⋃Α of such an arrangement.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1436-5073
    Keywords: interface in SiC-fiber reinforced Ti6Al4V ; analytical TEM ; thermal stability ; TEM-preparation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The thermal stability of the interface in an SiC-fiber reinforced Ti6Al4V-alloy was investigated using analytical transmission electron microscopy. Composites processed by hiping were heat-treated in vacuum between 600 °C and 800 °C for several hundred hours. The structure of the interface was investigated by TEM, and the element concentration in and near the interface was measured using EDX-STEM and EELS. Experimental errors resulting from the sample preparation are discussed. Based on the structural and analytical investigations, the conclusion can be drawn that the interface is stable for application temperatures of up to about 600 °C.
    Type of Medium: Electronic Resource
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