ISSN:
1057-9257
Keywords:
Indium sulphide
;
Metal-organic chemical vapour deposition
;
Thin films
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
The dimeric indium thiolate [(tBu)2In(μ-StBu)]2 has been used as a single-source precursor for the metal-organic chemical vapour deposition (MOCVD) of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the non-equilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy-dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860010504
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