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  • YBa2Cu3Ox  (1)
  • relaxation  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 13 (2000), S. 367-370 
    ISSN: 1572-9605
    Keywords: Bi2Sr2CaCu2O x ; relaxation ; hysteresis curves
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We have studied the role of short relaxation time on magnetic hysteresis in a Bi2Sr2CaCu2O x single crystal. Effects were examined by comparing isothermal magnetization curves obtained over a range of temperatures as a function of the applied magnetic field, H, for magnetic field ramp rates of 3 and 30 Oe/s. At low temperature, a second magnetization peak, H p, was produced by differences in magnetic relaxation occurring over a short period during the initial stage of relaxation. The data suggested an absence of pinning crossover for H ≈ H p.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 12 (1999), S. 661-665 
    ISSN: 1572-9605
    Keywords: Flux creep ; magnetic relaxation ; YBa2Cu3Ox
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Magnetic relaxation, with magnetic fields applied parallel to the c axis, was measured in a high-quality melt-textured YBa2Cu3Ox bar. Zero-field-cooled magnetization-versus-time data were obtained within a regime of field and temperatures dominated by single vortex pinning. The activation pinning energy U = U M was calculated from experimental data and compared to U = U 0 ln(J c /J), where U, is a constant, J c is the critical current density, and J the current density. This expression for U obtains within the individual pinning regime. A logarithmic dependence of U M on J was found, and the data indicated that a scaling function of U M , g(T/T c ) = (1−T/T c )1/2, was appropriate for describing the single-vortex pinning regime.
    Type of Medium: Electronic Resource
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