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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 44 (1979), S. 4802-4808 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5374-5379 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc self bias voltage developed during CH4/Ar radio frequency plasma-enhanced vapor deposition of thin films containing polycrystalline diamond grains within an a:C matrix (carbon-diamond) is found to influence the optical and mechanical properties of the films. In particular it is shown that there is a simultaneous etch deposition process which takes place, and that the dc bias can be used to control this etch rate, and hence the net film growth rate. When a balance between etching and deposition is achieved, the films show increased residual stress and optical density with exposure to Ar+ bombardment in the plasma. In addition to the measured dc bias the local electric field developed around the substrate is also found to significantly influence the energy with which ions impinge upon the growing film.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1149-1153 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous C/diamond films have been prepared by rf plasma enhanced vapor deposition from a CH4/Ar gas mixture. Infrared and optical-ultraviolet absorption characteristics are reported and used to characterize the bonding and optical properties of these films. It has been found that the optical band gap is not related to the hydrogen content in the films and varies according to the dc self bias developed during deposition. The IR data show that the hydrogen in the a-C/diamond films is associated with triply bonded sp1 carbon as in acetelyne. The optical band gap of the films can be varied from 1.2–4.0 eV.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6276-6281 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The need to grow high quality semiconducting hydrogenated amorphous carbon (a-C:H) thin films to allow n-type electronic doping by nitrogenation has lead us to deposit films with low paramagnetic defect density (1017 cm−3). The films were grown on the earthed electrode of a radio frequency driven plasma enhanced chemical vapor deposition system using methane, helium and a range of nitrogen concentrations as the precursor gases. The deposited films are shown to be polymer like. Changes in the chemical structure and relative bond fractions as a function of the nitrogen flow rate into the plasma chamber and ex situ annealing are reported. Particular attention is paid to changes in the film structure after annealing at 100 °C, since an increase in the E04 optical band gap is observed as a function of nitrogen flow after the anneal. This suggests a decrease in the defect density of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 2265-2268 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Experimental Raman spectra are presented for the J=0→J=2 transition of para-H2 and for the J=1→J=3 transition of ortho-H2 adsorbed on the amorphous ice surface. Analysis of the spectra is based on a path integral Monte Carlo simulation of the H2 adsorbate-surface system. Rotational line broadening is due to the removal of the (2J+1)-fold degeneracy of the J manifolds of the ||M〉 states. The line broadening pattern is traced to the characteristics of the anisotropic gas-surface interaction. The theoretical model, which does not contain any adjustable parameters, provides a simple quantitative interpretation of the spectra.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5175-5179 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of photoluminescence (PL) in hydrogenated amorphous carbon (a-C:H), and nitrogenated and hydrogenated amorphous carbon (a-C:H:N) thin films grown by radio frequency driven plasma enhanced chemical vapor deposition is still a subject of much debate. In this work, we investigate the PL signal obtained from a-C:H and a-C:H:N films, paying particular attention to the effect of nitrogen flow rate during growth, and postgrowth, ex situ annealing on the PL properties of the films. We also correlate the PL spectra to the electronic structure of the films. The films had a low paramagnetic defect density (1017 cm−3). The PL spectra were obtained using the 488 nm (2.54 eV) line of an argon ion laser, as the excitation source. It was observed that the nitrogenation of the films leads to the creation of new bands in the PL signal, which were correlated to the bond fraction of CN triple bonds, as measured by infrared spectroscopy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3290-3297 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes an experimental technique to measure simultaneously the thermal diffusivity and thermal conductivity of nonmetallic materials. The method is applied to a large thickness sample and uses a single temperature sensor located at the heating surface of a perspex sample. In addition the golden section optimization technique is used with parameter estimation for minimizing two different objective functions. Each of the thermal properties is estimated in a different way. The diffusivity estimation uses a correlation function estimator between heat flux and temperature while a square function error of experimental and estimated temperatures is the objective function used for determining the conductivity. A comparison with the guarded hot plate method indicates a deviation of 2.1% of the thermal conductivity. An error analysis for both properties is also presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Grass and forage science 59 (2004), S. 0 
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A simple method for measuring tiller volume of grasses is described. The equipment, based on the communicant pipe principle, was built using a PVC pipe linked to a laboratory volumetric pipette. The results showed a high degree of consistency and were similar to empirical results published in the literature, indicating that tiller volume of grasses can be easily measured with this technique.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2626-2634 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of nitrogen addition on the structural and electronic properties of hydrogenated amorphous carbon (a-C:H) films has been characterized in terms of its composition, sp3 bonding fraction, infrared and Raman spectra, optical band gap, conductivity, and paramagnetic defect. The variation of conductivity with nitrogen content suggests that N acts as a weak donor, with the conductivity first decreasing and then increasing as the Fermi level moves up in the band gap. Compensated behavior is found at about 7 at. % N, for the deposition conditions used here, where a number of properties show extreme behavior. The paramagnetic defect density and the Urbach tailwidth are each found to decrease with increasing N content. It is unusual to find alloy additions decreasing disorder in this manner. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy indicates the formation of extended intermixture alloy regions at the interfaces in the GaSb/AlSb superlatttices, which suppress the optical confined modes. A misfit strain was found to be responsible for the high-frequency shift of the optical phonons confined in the AlSb layers. It turned out that, in the ultrathin layer GaSb/AlSb superlattices with layer thicknesses less than 7 monolayers, the strain was completely relaxed in the alloy interface regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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