ISSN:
0268-2605
Keywords:
disilane
;
gas source MBE
;
synchrotron radiation
;
silicon hydride
;
Chemistry
;
Industrial Chemistry and Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)-assisted gas source molecular beam epitaxy (SR-GSMBE) using Si2H6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth by means of infrared reflection absorption spectroscopy with a Si(100) substrate and a CoSi2 buried metal layer. It is concluded that the chemisorption of gas-phase reactive species such as SiHn and H generated by SR irradiation and the subsequent hydrogen desorption are the key mechanisms of SR-GSMBE at low substrate temperatures. © 1998 John Wiley & Sons, Ltd.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
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