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Photoreflectance characterisation of GaAs and GaAs/GaAIAs structures grown by MOCVD (1995)

Misiewicz, J. ; Jezierski, K. ; Sitarek, P. ; [weitere]

New York, NY [u.a.] : Wiley-Blackwell

Advanced Materials for Optics and Electronics 5 (1995), S. 321-327

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ISSN: 1057-9257

Schlagwort(e): photoreflectance spectroscopy ; MOCVD ; GaAs ; GaAIAs ; heterostructures ; quantum wells ; surface ; interface ; Kramers-Kronig analysis ; Chemistry ; Polymer and Materials Science

Quelle: Wiley InterScience Backfile Collection 1832-2000

Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik

Notizen: Epitaxial undoped and doped (Si and Zn) GaAs and GaAIAs layers as well as heterostructures of GaAs/GaAIAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells. The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis. A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.

Zusätzliches Material: 8 Ill.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1002/amo.860050605

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