ISSN:
1572-8986
Keywords:
Plasma etching
;
iodine- and bromine-based dry etching
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract Two novel plasma chemistries, BI 3 and BBr 3 , have been employed for dry etching of LaCaMnO 3 thin films. For both mixtures there is some chemical enhancement of etch rates at low halide compositions in the discharge, and the rates are a strong function of ion/neutral ratio. Maximum rates are obtained at ratios near 0.02. Etch yields are typically low (〈0.3) under inductively-coupled plasma (CICP) conditions. Smooth d surface morphologies are obtained over a wide range of conditions, with high-fidelity pattern transfer using SiO 2 or SiN x masks.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1021643709200
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