ISSN:
1572-9605
Schlagwort(e):
single crystals
;
HgBa2Ca2Cu3O8+δ
;
high pressure
;
substitutions
;
irreversibility line
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
Abstract Single crystals of HgBa2Ca2Cu3O8+δ compound with partial substitution of Sr and Pb have been grown at high gas pressure. Bond valence sum calculations show that the substitution of Sr for Ba leads to a more homogeneous distribution of holes between nonequivalent CuO2 planes. In nonsubstituted crystals, the density of holes is significantly higher in the inner CuO2 planes. The irreversibility field increases on Sr substitution. The thickness of the charge reservoir decreases with Sr substitution by 0.7 Å.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1026426501425
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