ISSN:
0029-5981
Keywords:
finite element method
;
crystal growth
;
liquid phase electroepitaxy
;
moving boundary
;
Engineering
;
Engineering General
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Mathematics
,
Technology
Notes:
A finite element numerical simulation model for the liquid phase electroepitaxial growth process of gallium arsenide is presented. The basic equations obtained from the fundamental principles of electrodynamics of continua, the constitutive equations for the liquid and solid phases derived from a rational thermodynamic theory, and the associated interface and boundary conditions are presented for a two-dimensional axisymmetric growth cell configuration.The field equations are solved numerically by an adaptive finite element procedure. The effect of moving interfaces is taken into account. Numerical simulations are carried out for different convection levels by changing the value of the gravitational constant. Results show that convection has significant effect on the growth process under normal gravity conditions and results in thickness non-uniformity of the grown layers. The thickness non-uniformity leads to curved interfaces of growth and dissolution, which enhance convection.
Additional Material:
13 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/nme.1620382304
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