ISSN:
1573-4854
Keywords:
porous silicon
;
passivation
;
photoluminescence intensity stability
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract We have investigated the effects of the porous Si surface passivation by oxygen or nitrogen ion processing on the photoluminescence (PL) intensity and its stability using an electron cyclotron resonance ion source. The results indicate that an anneal before exposure to ion beam causes a PL intensity enhancement upon exposure to oxygen or nitrogen ion beam. A combination of an anneal and a passivation by exposure to nitrogen ion beam enhances the PL intensity by a factor of ∼2.5 compared to the intensity of the initial as-anodized PS and the enhanced intensity is stabilized for more than 180 min under Ar+-laser illumination while oxygen-ion-exposed PS exhibits an enhancement in PL intensity only by ∼1.4 and a decay in PL intensity by ∼20% after 180 min Ar+-laser illumination. The results suggest that the reaction of nitrogen with a PS surface plays a key role for the PL intensity enhancement and stability.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009659109107
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