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  • porous silicon coating  (1)
  • porous silicon morphology  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of porous materials 7 (2000), S. 401-405 
    ISSN: 1573-4854
    Keywords: porous silicon coating ; diamond on porous silicon ; diamond nucleation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Diamond coatings on porous silicon (PS) samples have been obtained by the hot-filament chemical vapor deposition(CVD) technique. We focused our attention on the coating morphology, showing experimentally that high quality diamond coatings may be produced with the PS sample kept at 710°C. The deposited patterns consist of polycrystalline grains with a plane interface with the PS layer.At 790°C, the quality of the coating is improved but the PS layer becomes damaged, and at 650°C the coating consists of diamond-like carbon particles. Besides the temperature, other factors such as the porosity, roughness and chemical activity of the PS layer deserve attention. We observed that one of the limiting factors of the deposition process was the high nucleation time. Two nucleation mechanisms are involved in the growth process. The first nucleation mechanism occurs on the top of the sharp PS features, subsequently to the nucleation a superficial film, and then a second nucleation mechanism occurs over this surface, which allows the growth process to continue. We also observed the presence of ablue-shift in the luminescence spectra following the coating.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of porous materials 7 (2000), S. 349-352 
    ISSN: 1573-4854
    Keywords: porous silicon morphology ; nanometric roughness ; pore size measurement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The morphology of porous silicon (PS) formed by wet etching of Si crystals in fluoride solutions was investigated by atomic force microscopy (AFM). The experiments were made in a liquid cell to allow the measurements to be made before the drying process caused restructuring of the surface porosity. We studied the surface roughness, showing experimentally that PS samples produced in high HF concentrations are smoother than PS samples produced in low HF concentrations. We also demonstrated that using the capillary forces produced by the AFM probe tip itself, it is possible to etch layers of the PS material, opening “windows” to observe the interior PS layers. We identified through Fourier transform analysis the most frequent dimensions of the pores, concluding that these pores in general do not suffer appreciable vertical narrowing and that high HF concentrations are favorable for the formation of more pores of smaller size.
    Type of Medium: Electronic Resource
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