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  • 1
    Electronic Resource
    Electronic Resource
    CVD of SiO2 and related materials: An overview (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 101-114 
    Details
    ISSN: 1057-9257
    Keywords: chemical vapour deposition (CVD) ; silica ; silicate gasses ; SiO2 ; MOS devices ; precursors ; hydrides ; halides ; metal organic compounds ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: An overview is presented of the chemical vapour deposition (CVD) of SiO2 and related materials, together with a description of their application in metal-oxide-semiconductor (MOS) devices, including device isolation, gate insulation passivation and planarisation. A comparison of CVD methods and precursors is presented for SiO2 as well as doped glasses, e.g. borosilicate glasses (BSG), phosphosilicate glasses (PSG), borophosphosilicate glasses (BPSG), and arsenosilicates glasses (AsSG).
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    MOCVD of group III chalcogenides (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 245-258 
    Details
    ISSN: 1057-9257
    Keywords: gallium ; indium ; metal organic chemical vapour deposition (MOCVD) ; precursors ; selenium ; sulphur ; tellurium ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A review is presented of recent advances in the metal organic chemical vapour deposition (MOCVD) of thin films of group III chalcogenides, including their application for the passivation of GaAs surfaces. The majority of studies involve the deposition of thermodynamic phases of composition ME and M2E3 (M=Ga, In; E=S, Se, Te), however, MOCVD allows for the growth of either high-pressure (tetragonal InS) or non-thermodynamic phases (metastable cubic phases of GaS and InSe). Based on the results to date, a series of goals for molecular control over the structure of deposited films is discussed.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050502
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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