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  • 1
    Digitale Medien
    Digitale Medien
    Bi4Ti3O12 Thin Films from Mixed Bismuth-Titanium Alkoxides (1997)
    Springer
    Journal of sol gel science and technology 8 (1997), S. 759-763 
    Details
    ISSN: 1573-4846
    Schlagwort(e): sol-gel ; bismuth titanate ; spin-coating ; thin films ; ferroelectric
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Bi4Ti3O12 thin films were obtained by the sol-gel method. The precursor solution was prepared by allowing the two metallic alkoxides, Bi(OC2H4OCH3)3 and Ti(OC2H4OCH3)4, to react in 2-methoxy-ethanol to form the mixed alkoxide. This stable sol was deposited by spin-coating onto platinized silicon substrates. X-Ray diffraction patterns indicate that the perovskite initial crystallization temperature is 460°C for powder samples and it ranges between 400 and 500°C, for thin films, as a function of the number of coating layers. Dense, smooth and crack free thin films with grain sizes ranging from 20 nm to 500 nm are obtained, depending on the number of coating layers and on the post-deposition temperature annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1018321721596
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Bi4Ti3O12 thin films from mixed bismuth-titanium alkoxides (1997)
    Springer
    Journal of sol gel science and technology 8 (1997), S. 759-763 
    Details
    ISSN: 1573-4846
    Schlagwort(e): sol-gel ; bismuth titanate ; spin-coating ; thin films ; ferroelectric
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Bi4Ti3O12 thin films were obtained by the sol-gel method. The precursor solution was prepared by allowing the two metallic alkoxides, Bi(OC2H4OCH3)3 and Ti(OC2H4OCH3)4, to react in 2-methoxy-ethanol to form the mixed alkoxide. This stable sol was deposited by spin-coating onto platinized silicon substrates. X-Ray diffraction patterns indicate that the perovskite initial crystallization temperature is 460°C for powder samples and it ranges between 400 and 500°C, for thin films, as a function of the number of coating layers. Dense, smooth and crack free thin films with grain sizes ranging from 20 nm to 500 nm are obtained, depending on the number of coating layers and on the post-deposition temperature annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF02436935
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
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