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Effect of Photoetching on Porous Silicon Morphology (1997)

Guerrero-Lemus, R. ; Moreno, J. D. ; Martín-Palma, R. J. ; [et al.]

Chichester [u.a.] : Wiley-Blackwell

Surface and Interface Analysis 25 (1997), S. 677-682

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ISSN: 0142-2421

Keywords: silicon ; light irradiation ; surface tension ; transmission electron microscopy ; Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Physics

Notes: The morphological differences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structure, due to the presence of narrower outer silicon fibres, which suffer a more severe cracking process upon drying. © 1997 by John Wiley & Sons, Ltd.

Additional Material: 6 Ill.

Type of Medium: Electronic Resource

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