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  • 1
    Electronic Resource
    Electronic Resource
    Antiparasitic agents. 6. Synthesis and anthelmintic activities of novel isothiocyanatophenyl-1,2,4-oxadiazoles (1985)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 1234-1241 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00147a019
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  • 2
    Electronic Resource
    Electronic Resource
    Photoacoustic thermal characterization of spark-processed porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8951-8954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A non-separation approach to determine the spark-processed porous silicon thermal parameters is presented. This thermal characterization was performed through application of the photoacoustic technique, in combination with compositional models for spark-processed porous silicon samples. The thermal parameters obtained are in agreement with existing studies about the composition of this material. This approach opens the possibility of performing the thermal characterization of other porous semiconductors and analogous materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362626
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  • 3
    Electronic Resource
    Electronic Resource
    Calculation of static vibrational polarizabilities of polymers: Poly(HF) in two configurations (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 6100-6106 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A finite field approach for the calculation of static vibrational polarizabilities of molecules is extended to polymers using the previously developed method for the calculation of the electronic contribution of periodic quasi-one-dimensional systems. The method has been applied to study the effect of the vibrations on the static polarizability of an infinite stack of alternating HF molecules and of poly(HF) in the experimentally determined hydrogen-bonded zig–zag structure. The results are discussed and compared with a calculation for the isolated HF molecule and studies in the literature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479955
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  • 4
    Electronic Resource
    Electronic Resource
    CHEMOKINE SIGNALING AND FUNCTIONAL RESPONSES: The Role of Receptor Dimerization and TK Pathway Activation (2001)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Immunology 19 (2001), S. 397-421 
    Details
    ISSN: 0732-0582
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Notes: Abstract A broad array of biological responses, including cell polarization, movement, immune and inflammatory responses, and prevention of HIV-1 infection, are triggered by the chemokines, a family of structurally related chemoattractant proteins that bind to specific seven-transmembrane receptors linked to G proteins. Here we discuss one of the early signaling pathways activated by chemokines, the JAK/STAT pathway. Through this pathway, and possibly in conjunction with other signaling pathways, the chemokines promote changes in cellular morphology, collectively known as polarization, required for chemotactic responses. The polarized cell expresses the chemokine receptors at the leading cell edge, to which they are conveyed by rafts, a cholesterol-enriched membrane fraction fundamental to the lateral organization of the plasma membrane. Finally, the mechanisms through which the chemokines promote their effect are discussed in the context of the prevention of HIV-1 infection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.immunol.19.1.397
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  • 5
    Electronic Resource
    Electronic Resource
    V-Region Connectivity in T Cell Repertoires (1989)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Immunology 7 (1989), S. 209-249 
    Details
    ISSN: 0732-0582
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.iy.07.040189.001233
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  • 6
    Electronic Resource
    Electronic Resource
    Sol–gel derived grain oriented barium strontium titanate thin films for phase shifter applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 896-903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work process methodology was optimized to synthesize oriented barium strontium titanate (BST) (50/50) and (60/40) thin films on strontium titanate (100) and lanthanum aluminate (LAO) (100) substrates by using the chemical solution deposition technique. These films were characterized in terms of their phase formation behavior and structural growth characteristics using x-ray diffraction and atomic force microscopy. A tentative mechanism of the epitaxial growth has been proposed. Films were also characterized in terms of their dielectric properties. The high tunability and low dielectric loss of these films make them attractive for fabricating tunable dielectric devices. Accordingly, we have fabricated eight element coupled microstrip phase shifters and tested them in terms of their degree of phase shift and insertion loss characteristics. An insertion loss of 8.435 dB, phase shift in the order of 320° (2.6–14.5 V/μm) and κ factor (phase shift/dB of loss) of about 38.0°/dB was achieved in BST (60/40) films deposited on LAO (100) substrate which is comparable to the films grown by other film deposition techniques reported in the literature. The microstructure of the sol–gel derived films show surface porosity which may be responsible for the low dielectric strength of these films. Presently, we are studying the sintering mechanism and kinetics of these films in order to improve the density which is believed to further improve the phase shift and lower insertion loss to result in an improved tunability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378811
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  • 7
    Electronic Resource
    Electronic Resource
    A spectrometer for the measurement of reflectance-difference spectra (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2147-2152 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a spectrometer (visible-ultraviolet photon energy range) for the measurement of reflectance-difference spectra of cubic semiconductors. The spectrometer employs a photoelastic modulator to modulate the polarization of the light incident on the sample and allows for a simple procedure to correct the measured spectra for parasitic components associated with such modulation. The instrument reported has a higher throughput than more conventional setups. To illustrate the spectrometer performance we report on reflectance-difference spectra of (001) oriented GaAs single crystals doped with silicon donors at a level of 1018/cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143952
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  • 8
    Electronic Resource
    Electronic Resource
    Photoreflectance spectroscopy of CdTe(001) around E1 and E1+Δ1: linear electro-optic spectrum (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2062-2065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the measurement of the linear electro-optic (LEO) reflectance spectrum of CdTe (001) in an energy range around the E1 and E1+Δ1 interband transitions. This spectrum shows a sharp peak localized in energy around E1 and a second shorter peak around E1+Δ1. We show that the theoretical model developed in an earlier article for the LEO line shape of GaAs (001) gives an accurate description of the experimental LEO CdTe spectrum as well. This model includes two contributions to the LEO line shape, a first one proportional to the normalized energy derivative of the reflectance spectrum and a second one associated to the sample reflectance. The large spin-orbit splitting energy of CdTe, (Δ1(approximate)0.6 eV) allows for a neat separation of the contributions to the LEO spectrum of the E1 and E1+Δ1 critical points, providing a critical test for the LEO line shape model. From the fitting we obtain d′/d=1.5 for the conduction band to valence band deformation potential ratio and E2=9.1 eV for the interband deformation potential in the Brooks notation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371009
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  • 9
    Electronic Resource
    Electronic Resource
    Monte Carlo study of hole mobility in Al-doped 4H–SiC (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1359-1364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ohmic transport of holes in p-type Al-doped 4H–SiC samples is investigated using a Monte Carlo tool based on a full-potential band structure. The temperature and doping dependence of the hole mobility and its anisotropy are calculated and discussed from a physical point of view, where we stress the importance of considering two-band conduction. Acoustic and optical phonon scattering, as well as ionized and neutral impurity scattering, have been considered. The Monte Carlo program also considers incomplete ionization of impurity atoms compatible with an Al ionization energy of 0.2 eV. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429802
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  • 10
    Electronic Resource
    Electronic Resource
    Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heterointerface is larger than that of the homointerface. Reflectance difference measurements further support the existence of two spatially separated GaAs regions, which produce two independent overlapping optical modulated signals in the ZnSe/GaAs/GaAs heterostructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370747
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