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  • 1
    Electronic Resource
    Electronic Resource
    SALBUTAMOL AND KETONURIA IN PREGNANCY CASE REPORT (1980)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 87 (1980), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A patient is described who had heavy ketonuria without associated glycosuria during treatment with salbutamol in pregnancy. Blood glucose and ketone concentrations were normal while urine secretion of ketone bodies was increased. This suggests that ketonuria resulted from an altered renal threshold rather than a change in intermediary metabolism. Plasma ketone concentration should be measured before stopping salbutamol on the basis of ketonuria alone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1980.tb04510.x
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  • 2
    Electronic Resource
    Electronic Resource
    The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2517-2519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1−xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 μm and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 μm orthogonal misfit interactions occur and relaxation is dominated by the modified Frank–Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120105
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  • 3
    Electronic Resource
    Electronic Resource
    Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2704-2706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells were grown on bonded silicon-on-insulator (SOI) substrates. Comparison with similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low temperatures with a maximum value of 16 810 cm 2/V s for 2.05×1011 cm−2 carries at 298 mK. Effective masses obtained from the temperature dependence of Shubnikov–de Haas oscillations have a value of (0.27±0.02) m0 compared to (0.23±0.02) m0 for quantum wells on Si(100) while the cyclotron resonance effective masses obtained at higher magnetic fields without consideration for nonparabolicity effects have values between 0.25 and 0.29 m0. Ratios of the transport and quantum lifetimes, τ/τq=2.13±0.10, were obtained for the SOI material that are, we believe, the highest reported for any pseudomorphic SiGe modulation doped structure and demonstrates that there is less interface roughness or charge scattering in the SOI material than in metal–oxide–semiconductor field effect transistors or other pseudomorphic SiGe modulation doped quantum wells. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117684
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  • 4
    Electronic Resource
    Electronic Resource
    Concentration dependence of the Verwey transition in germanium- and fluorine-substituted magnetite (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3546-3548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnitude and temperature of the Verwey transition have been investigated for germanium- and fluorine-doped magnetite to assess the effectiveness of A sublattice and anion substitutions in displacing and suppressing the transition. It is found that the quantity G=d ln(σT)/d(1/T), where σ is the conductivity, is more sensitive to the existence of the transition than σ itself: the consequence is that the presence of the transition can be detected to higher degrees of substitution than heretofore. The rate of variation of the Verwey temperature Tv with level of substitution and the condition for suppression of the transition are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338719
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  • 5
    Electronic Resource
    Electronic Resource
    Routine real-time scanning at the first hospital visit (1982)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 89 (1982), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. All patients presenting at one consultant booking antenatal clinic had a routine realtime ultrasonic scan. The purpose was to study the accuracy of the technique, the additional work involved and the clinical benefit. All scans were performed by one operator. The average time per scan was 6 min compared with 15 min for each B scan. When gestation assessed by scan differed from gestation assessed by menstrual dates or clinical examination, an independent assessment was made after birth. There was a marked decrease in utilization of B-scanning facilities. Routine real-time scanning at the first visit was a reliable method of assessing gestation in 94% of patients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1982.tb04627.x
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  • 6
    Electronic Resource
    Electronic Resource
    Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 357-359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of Shubnikov de Haas oscillations in the temperature range 0.3–2 K have been used to determine an effective mass of 0.23 m0 in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. This value is in agreement with theoretical predictions and with that obtained from cyclotron resonance measurements. The ratio of the transport time to the quantum lifetime is found to be 0.8. It is concluded that the 4 K hole mobility of 11 000 cm2 V−1 s−1 at a carrier sheet density of 2.2×1011 cm−2 is limited by interface roughness and short-range interface charge scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111147
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  • 7
    Electronic Resource
    Electronic Resource
    Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2724-2726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effective masses in remote doped Si/Si0.8Ge0.2/Si quantum wells having sheet densities, Ns in the range 2×1011–1.1×1012 cm−2 have been determined from the temperature dependencies of the Shubnikov–de Haas oscillations. The values obtained increase with magnetic field and Ns. This behavior is taken as evidence for the nonparabolicity of the valence band and accounts for the discrepancies in previously reported masses. Self-consistent band structure calculations for a triangular confinement of the carriers have also been carried out and provide confirmation of the increase in mass with Ns. Theory and experiment give extrapolated Γ point effective masses of 0.21 and 0.20 of the free-electron mass, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113501
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  • 8
    Electronic Resource
    Electronic Resource
    Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V−1 s−1 for a sheet density of 6.2×1011 cm−2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123689
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  • 9
    Electronic Resource
    Electronic Resource
    Direct evidence for a piezoelectriclike effect in coherently strained SiGe/Si heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 960-962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hybrid acoustic spectroscopy technique has been used to demonstrate the (reversible) conversion of high frequency electric fields into longitudinal acoustic waves within a modulation-doped pseudomorphic Si/Si0.88Ge0.12/Si heterostructure. This provides compelling evidence for the existence of a piezoelectriclike coupling within such structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117095
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  • 10
    Electronic Resource
    Electronic Resource
    Back gating of a two-dimensional hole gas in a SiGe quantum well (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1870-1872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8×1011 cm−2 down to a measurement-limited value of 4×1011 cm−2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118729
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