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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7035-7039 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This article investigates the nonlinear effect of the self-induced electric field on the diffusion-induced stresses in a thin plate. We first approximate the nonlinear concentration-dependent diffusivity as a series of third-degree polynomials by the least-squares curve-fitting techniques and then calculate the distributions of concentration by the Galerkin method; afterwards and using these results, the diffusion-induced stresses inside the slab are determined. It is found that the differences from the linear case with a constant diffusivity are apparent. Furthermore, the nonlinear effect is modest for low-surface-concentration diffusion but extremely pronounced for high-surface-concentration diffusion. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2765-2772 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, we derive a strongly nonlinear evolution equation by using the integral method to study the instabilities in a directionally solidified binary mixture. This equation can not only describe the interfacial behaviors of all the long-wave limits, but can also provide the possibility of strongly nonlinear instability analyses. Weakly nonlinear analyses proceeded from the critical conditions are undertaken to investigate the two-dimensional bifurcation types and a transition curve separating subcritical and supercritical ranges is obtained.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3569-3578 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This article uses molecular dynamics simulation to investigate the role of Ar ions in the ion physical vapor deposition (IPVD) process for different Ar+-to-Cu+ ratios, and to analyze the influence of different Ar+-to-Cu+ ratios on the trench filling morphology. Also compared are the trench filling morphology observed for the IPVD process with that found in the conventional collimated magnetron deposition process. The molecular dynamics simulation includes a trench model and a deposition model, and uses the many-body, tight-binding potential method to represent the interatomic force acting among neutral atoms. The interatomic force acting between the ions and the neutral atoms is modeled by the pairwise Moliere potential method. The simulation indicates that the incident Ar ions influence the trench filling mechanisms in two significant ways; peeling of the cluster atoms, which promotes migration of the cluster atoms along the sidewall, and breaking of the bridge which forms when two clusters of atoms join. Both phenomena are beneficial since they promote a more complete filling of the trench. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2965-2967 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The nonlinear rupture problem of a thin power-law liquid film on a horizontal plane is studied. A nonlinear evolution equation is first derived for h(x,t), the film thickness, and then it is solved by numerical methods. The results reveal that the rupture time of the film decreases with decreasing the magnitude of the power-law exponent, n.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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