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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1823-1826 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple analytic model for the electroluminescence (EL) intensity and the total cell current in bilayer light-emitting diodes (LEDs) with Ohmic contacts is presented. Results are in good agreement with both existing experimental data and numerical simulations. This model permits the semiquantitative analyses of the influence of the most important parameters on the EL and cell currents. In particular, dependence of EL current on the ratio of electron to hole mobilities and on the LED geometry is analyzed. The predictions of the model are compared with analogous results for LEDs with barrier-limited injection of electrons. It is shown that the values of EL currents can be comparable. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1886-1892 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic theory has been developed to analyze the rise of electroluminescence from bilayer light emitting diodes upon applying a rectangular voltage pulse if the current of majority carriers is space charge limited while minority carrier injection is electrode limited. The onset of electroluminescence is governed by the growth of the interfacial charge densities rather than by the transit time. This result suggests that, for appropriate interfacial energy barriers, balanced injection can be established even if only one of the electrodes is ohmic. A qualitative agreement between theory and experiment has been obtained. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 91 (1969), S. 2117-2118 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 967-972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tail broadening of nondispersive photocurrent transients has been measured in 1,1-bis(di-4-tolylaminophenyl)cyclohexane-doped polystyrene over a range of concentrations, fields, and temperatures. The results are described by the parameter W, defined as W=(t1/2−t0)/t1/2, where t1/2 is the time for the transient to decay to one-half of its plateau value and t0 the time defined by the intersection of asymptotes of the plateau and trailing edge of the transient. The interpretation of the experimental results leads to the conclusion that energetic disorder is the principal source of broadening of the transients.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9283-9290 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model has been developed for charge recombination in double-layer organic light-emitting diodes (LEDs) in which charge transport across the interface between the anodic and cathodic cell compartments is impeded by energy barriers. Current flow is assumed to be controlled by the interplay between the field-assisted injection of majority carriers (holes) and minority carriers (electrons) at the contacts and field-assisted barrier crossing, both obeying Fowler–Nordheim-type relations. Charge recombination at the internal interface is considered as the dominant source for electroluminescence. Accumulation of majority carriers at that interface causes an enhancement of the cathodic electric field giving rise to enhanced electron injection. This effect tends to compensate for imbalanced injection due to different energy barriers at the contacts and causes an increase of the luminescence yield as compared to single-layer LEDs. The model is able to predict (i) the redistribution of the electric field inside the LED, (ii) the field dependence of the cell current, (iii) the dependence of the steady state luminescence intensity, (iv) the luminescence yield as a function of the cell current, and (v) the characteristic rise time of the light output, each parametric in the cathodic and the interfacial energy barriers normalized to the energy barrier for hole injection. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6954-6962 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A previously developed analytic model for charge carrier recombination in bilayer organic light emitting diodes [D. V. Khramtchenkov, V. I. Arkhipov, and H. Bässler, J. Appl. Phys. 79, 9283 (1996)] in which charge transport across the interface between anodic and cathodic cell compartments is impeded by energy barriers is extended to cells of arbitrary thickness of the constituent layers and variable energy barriers. The results indicate that the recombination yield is the result of a complicated interplay between redistribution of the electric field affecting the injection at the electrodes, internal charge accumulation, and field assisted barrier crossing. Unit charge carrier recombination efficiency is predicted to occur at moderate cell voltages and electron injection barriers less than (approximate)0.4 eV. At higher voltages, leakage process across the interface becomes progressively important. With increasing electron-injection barrier, that injection process becomes rate limiting. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6963-6967 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diodes consisting of a hole transporting layer containing tri-stilbeneamine as active medium and a hole blocking layer (an oxadiazole blend) sandwiched between indium-tinoxide and aluminium electrodes have been characterized via both their j(F) characteristics and the dependence of intensity, quantum efficiency, and spectrum of the electroluminescence on the thickness Le of the hole blocking layer. The results are discussed within the framework of the analytic model advanced in the preceding paper. Both the decrease of the effect of electric field screening at the anode due to the space charge accumulation at the internal interface as well as the recombination efficiency with decreasing Le is in good agreement with theory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2933-2935 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on stimulated emission from a solid conjugated methyl-substituted ladder-type poly(paraphenylene). The threshold for stimulated emission as well as the spectral narrowing is measured. Upon exciting within the low energy tail of the S1-S0 (0–0) absorption band narrow emission lines offset from the excitation by the energies of the dominant vibrational modes are observed. From these measurements we conclude that vibronic sublevels play a major role in the optical gain mechanism. Hence, the gain mechanism can be explained in terms of molecularly excited states. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2334-2340 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic theory has been developed to calculate the rise of electroluminescence from bilayer light emitting diodes with internal energy barriers for both majority and minority carriers upon applying a rectangular voltage pulse. Unless the mobility of the minority carriers—usually electrons, instead, is ≤2×10−7 cm2/V s, onset of electroluminescence is governed by the growth of the interfacial charge densities and the concomitant redistribution of the electric field inside the device rather than by charge carrier transport. The crucial system parameters turn out to be the energy barriers that control hole and electron injection. Good agreement with experiment is found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 848-856 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic theory is presented for dark injection from a metallic electrode into a random hopping system, e.g., a conjugated polymer or a molecularly doped polymer. It encompasses injection of a charge carrier from the Fermi level of the electrode into tail states of the distribution of hopping states of the dielectric followed by either return of the charge carrier to the electrode or diffusive escape from the attractive image potential. The latter process resembles Onsager-type geminate pair dissociation in one dimension. The theory yields the injection current as a function of electric field, temperature and energetic width of the distribution of hopping states. At high electric fields it resembles that the current calculated from Fowler-Nordheim tunneling theory although tunneling transitions are not included in the theory. Good agreement with experimental data obtained for diode structures with conjugated polymers as a dielectric is found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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