ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The reactive sputter deposition of TiN thin films onto glass substrate at the ambienttemperature using a homemade broad beam argon ion source was investigated in order to depositthe films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, theN2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc)were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN filmstructure was investigated by XRD and STM methods. All deposited films exhibited (220) preferredorientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-withat half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220)peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter(STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientationwas disturbed but not destructed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.303.pdf
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