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  • 11
    Electronic Resource
    Electronic Resource
    Infrared absorption spectrum of beryllium acceptors in silicon (1995)
    Springer
    International journal of infrared and millimeter waves 16 (1995), S. 339-348 
    Details
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Beryllium, when introduced into silicon by thermal diffusion, gives rise to several acceptor impurity centers. The infrared absorption spectrum of beryllium in silicon has been measured with a Fourier-transform spectrometer. The absorption spectrum observed clearly shows five different beryllium acceptor centers in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02096321
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    Paper (German National Licenses)
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  • 12
    Electronic Resource
    Electronic Resource
    Infrared absorption spectrum of neutral magnesium donors in silicon (1992)
    Springer
    International journal of infrared and millimeter waves 13 (1992), S. 769-775 
    Details
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The infrared absorption spectrum of neutral magnesium donor impurities in silicon has been investigated under the high resolution of a Fourier-transform infrared spectrometer. The absorption spectrum measured at liquid helium temperature are observed to be clearly better than those reported earlier in the literature. Several new lines corresponding to excitation from ground state to higher excited states have been observed and identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01010698
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    Paper (German National Licenses)
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  • 13
    Electronic Resource
    Electronic Resource
    Infrared absorption spectrum of singly ionized magnesium donors in silicon (1993)
    Springer
    International journal of infrared and millimeter waves 14 (1993), S. 1099-1106 
    Details
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The infrared absorption spectrum of singly ionized magnesium donor impurities in silicon has been measured. Due to better sample preparation and higher resolution of the instrument, the absorption spectrum obtained is much better than previous reports. Some new lines have been observed and identified. Besides the 2p± line, the 3p± line has also been observed for the first time to be a doublet indicating that the excited state np± splits into two states due to chemical splitting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02084585
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    Paper (German National Licenses)
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