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11

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Selective adsorption of metallocenes on clean and chemically modified Si(111) surfaces (1999)

Lin, J.-L. ; Rauscher, H. ; Kirakosian, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 5492-5496

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Metallocene adsorption on clean Si(111) and CaF2/CaF1/Si(111) substrates has been investigated with scanning tunneling microscopy. The surface chemical composition is found to strongly change the adsorption site selectivity, leading to an enhanced edge selectivity on modified substrates. Templates with well-defined local chemical reactivity have been created via self-assembly. The selective adsorption of metallocenes on such tailored substrates facilitates patterning ordered arrays of magnetic nanowires and stripes on the single digit nanometer scale. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371551

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12

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Enhancement of magnetoresistance in the intermediate state of Pr0.5Sr0.3Ca0.2MnO3 (2001)

Chang, C. W. ; Lin, J. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 4874-4876

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Current–voltage (I–V) characteristics of Pr0.5Sr0.3Ca0.2MnO3 are measured at different temperatures and different fields. Our data of I–V curves show a crossover from linear to nonlinear behavior at the temperature lower than the charge ordering temperature. New findings in this work include (i) abrupt jumps/drops of voltage in each I–V curve below 100 K and (ii) an enhancement of magnetoresistance (MR) ratio from 15% to 20% which is associated with the unusual voltage jumps/drops in I–V curves. The enhancement of MR ratio evidences the existence of an intermediate state between the charge ordering state and the charge ordering breakdown state. Most importantly, the existence of such intermediate state provides a new route to achieve a low field colossal magnetoresistance for future applications of spintronics. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1408263

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13

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Universal crossed molecular beams apparatus with synchrotron photoionization mass spectrometric product detection (1997)

Yang, X. ; Lin, J. ; Lee, Y. T.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 68 (1997), S. 3317-3326

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: Vacuum ultraviolet radiation was generated from an undulator at the Advanced Light Source Synchrotron facility and used for photoionization detection of reaction products in a new universal crossed molecular beams machine. A description of the machine and its performance is presented. Initial experiments on the photodissociation of methylamine (CH3 NH2), ozone (O3), oxalyl chloride [ (OCCl)2] as well as the reactive scattering of Cl with C3 H8 show many of the advantages of photoionization in comparison to electron impact ionization, which has been exclusively used in such instruments in the past. "Momentum matching" of reaction products is much more easily accomplished than in electron impact studies due to suppression of dissociative ionization. The tunability of the vacuum ultraviolet radiation can be used to suppress background from residual gases especially when it is desired to detect free radical reaction products. Even when the tunability cannot be used to suppress background, the fact that little heat is generated by the ionizing beam allows background to be substantially suppressed by cryogenic pumping. The energy resolution of the apparatus is comparable to instruments that have previously been designed with electron impact ionization which have more than twice as long a flight path. This new instrument provides outstanding performance for fundamental studies of chemical dynamics. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1148291

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14

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Erythema nodosum associated with carcinoid tumour (2004)

Lin, J.-T. ; Chen, P.-M. ; Huang, D.-F. ; [et al.]

Oxford, UK : Blackwell Science Ltd

Clinical and experimental dermatology 29 (2004), S. 0

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ISSN: 1365-2230

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Medicine

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01544.x

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15

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A novel keratin 9 gene mutation (Asn160His) in a Taiwanese family with epidermolytic palmoplantar keratoderma (2004)

Lin, J.-H. ; Lin, M.-H. ; Yang, M.-H. ; [et al.]

Oxford, UK : Blackwell Science Ltd

Clinical and experimental dermatology 29 (2004), S. 0

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ISSN: 1365-2230

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Medicine

Notes: Epidermolytic palmoplantar keratoderma (EPPK) is an autosomal dominant inherited disorder of keratinization. Recent molecular studies have shown that EPPK is caused by mutations in keratin 9 gene (KRT9). We report a Taiwanese family with EPPK with a novel mutation with an A→C transition at the first nucleotide of codon 160 in KRT9. The mutation is predicted to result in an asparagine to histidine substitution (N160H) at the beginning of the α-helical 1A domain of keratin 9. Mutations in this region could disrupt keratin filament assembly, leading to degeneration or cytolysis of keratinocytes. Our mutation analysis confirms that codon 160 in KRT9 is one of the mutation hot spots in EPPK.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01497.x

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16

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The interaction between carbon monoxide and yttrium barium copper oxide, YBa2Cu3Ox, as studied by TG/DTA, FTIR, and XPS (1993)

Lin, J. ; Neoh, K. G. ; Li, N. ; [et al.]

s.l. : American Chemical Society

Inorganic chemistry 32 (1993), S. 3093-3098

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ISSN: 1520-510X

Source: ACS Legacy Archives

Topics: Chemistry and Pharmacology

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1021/ic00066a021

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17

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Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)

Smith, M. ; Chen, G. D. ; Lin, J. Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 7001-7004

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.362448

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18

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Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy (1996)

Chen, G. D. ; Smith, M. ; Lin, J. Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 2675-2683

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Continuous-wave and time-resolved photoluminescence spectroscopies have been employed to study the band-edge transitions in GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. In addition to the neutral-donor-bound exciton transition (the I2 line), a transition line at about 83 meV below the band gap has been observed in an epitaxial layer grown under a lower plasma power or growth rate. This emission line has been assigned to the band-to-impurity transition resulting from the recombination between electrons bound to shallow donors and free holes D0, h+). Systematic studies of these optical transitions have been carried out under different temperatures and excitation intensities. The temperature variation of the spectral peak position of the D0, h+) emission line differs from the band gap variation with temperature, but is consistent with an existing theory for D0, h+) transitions. The dynamic processes of the D0, h+) transition have also been investigated and subnanosecond recombination lifetimes have been observed. The emission energy and the temperature dependencies of the recombination lifetime have been measured. These results have provided solid evidence for the assignment of the D0, h+) transition and show that the motions of the free holes which participated in this transition are more or less restricted in the plane of the epitaxial layer at temperatures below 140 K and that the thermal quenching of the emission intensity of this transition is due to the dissociation of neutral donors. Our results show that time-resolved photoluminescence spectroscopy can be of immense value in understanding the optical recombination dynamics in GaN. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361138

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19

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Growth kinetics of amorphous interlayers by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline V thin films on (001)Si (1995)

Lin, J. H. ; Chen, L. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 4425-4430

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The growth kinetics of an amorphous interlayer (a-interlayer) formed by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline V thin films on (001)Si have been investigated by conventional and high-resolution transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 430–465 °C. The growth then slows down and deviates from a linear growth law as a critical thickness of the a-interlayer is reached. The activation energy of the linear growth and maximum thickness of the a-interlayer were measured to be 1.1±0.3 eV and 4.5 nm, respectively. The correlations among differences in atomic size and electronegativity between metal and Si atoms and activation energy of the linear growth, critical and maximum a-interlayer thickness, the calculated free-energy difference in forming the amorphous phase, as well as atomic mobility in Ti/Si, Zr/Si, Hf/Si, Ta/Si, Nb/Si, and V/Si systems are discussed. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359470

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20

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Fundamental electrical properties of fluorinated and N2O plasma-annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures (1994)

Chen, P. C. ; Hsu, Klaus Y. J. ; Hwang, H. L. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 5508-5514

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A technique for growing ultrathin silicon oxides of superior quality at low temperatures is indispensable for future submicron device applications. Fundamental characteristics such as the oxide breakdown fields, oxide charges, and interface-state densities of various ultrathin silicon oxides (≤8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 and 600 °C) were investigated. Fluorination (HF soaking) and low-temperature N2O plasma annealing were employed to improve the properties of the oxides. The breakdown fields of the as-grown silicon oxides were enhanced and the interface-state densities were reduced. The effect of N2O annealing time on the interface-state density was also investigated. A longer annealing time ((approximately-greater-than)1 h) was required to reduce the interface-state density. The effective oxide charge density of 600 °C as-grown oxide was as low as 6×1010 cm−2. Additionally, the breakdown field of the thin silicon oxide grown at 600 °C with 15 min N2O plasma annealing was 12 MV/cm.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357170

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