ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
To determine the maximum allowed power dissipation in a power transistor, it is importantto determine the relationship between junction temperature and power dissipation. This work presentsa new method for measuring the junction temperature in a SiC bipolar junction transistor (BJT) that isself-heated during DC forward conduction. The method also enables extraction of the thermalresistance between junction and ambient by measurements of the junction temperature as function ofDC power dissipation. The basic principle of the method is to determine the temperature dependentI-V characteristics of the transistor under pulsed conditions with negligible self-heating, and comparethese results with DC measurements with self-heating. Consistent results were obtained from twoindependent temperature measurements using the temperature dependence of the current gain, and thetemperature dependence of the base-emitter I-V characteristics, respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1171.pdf
Permalink