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  • 11
    Electronic Resource
    Electronic Resource
    Mouth occlusion pressure (P0.1) in acute respiratory failure (1985)
    Springer
    Intensive care medicine 11 (1985), S. 134-139 
    Details
    ISSN: 1432-1238
    Keywords: Mouth occlusion pressure (P0.1) ; Acute respiratory failure ; Weaning from mechanical ventilation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We studied 20 unselected patients admitted to our Intensive Care Unit (ICU) suffering from acute respiratory failure (ARF), who needed mechanical ventilatory support. In all of them we followed a prospective protocol to investigate the value of mouth occlusion pressure (P0.1) as an indicator for weaning. Fifty-two tests were classified into three groups: a need to be reconnected to mechanical ventilation (MV), stable on intermittent mandatory ventilation (IMV), or spontaneous breathing on a T-tube (TT). The results showed that at increased values of P0.1 there were more difficulties in weaning patients from MV. Seventy-eight percent (78%) of the occasions where weaning was successful, values of P0.1 were ≤4.2 cm H2O, in chronic or non-chronic patients. Eighty-nine percent (89%) of the times when P0.1 values were higher than 4.2 cm H2O the same patients required ventilatory support, total (MV) or partial (IMV). These differences were statistically significant (p〈0.01). We conclude that the P0.1 is an easily obtained non-invasive parameter, that can contribute along with other more conventional measurements to a superior indication for weaning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00258538
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  • 12
    Electronic Resource
    Electronic Resource
    Developmental outcome of infants with severe intracranial-intraventricular hemorrhage and hydrocephalus with and without ventriculoperitoneal shunt (1986)
    Springer
    Child's nervous system 2 (1986), S. 149-152 
    Details
    ISSN: 1433-0350
    Keywords: Intraventricular hemorrhage ; Developmental quotient ; Ventriculoperitoneal shunt ; Ventriculomegaly ; Hydrocephalus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Thirty-six infants who developed grade III and IV intraventricular hemorrhages during the neonatal period were followed up to determine their developmental quotient. All of these infants had ventriculomegaly and 15 of them required a ventriculoperitoneal (VP) shunt during the neonatal period prior to discharge from Intensive Care Nursery. The mean developmental quotient for the infants with the VP shunt was 67.93. The mean developmental quotient for the infants with ventriculomegaly but no VP shunt was 88.71 (P〈0.02). Among the nonshunted group of infants, 13 (61.9%) had developmental quotients greater than 85, and among the shunted group 5 infants (33.3%) had developmental quotients greater than 85. Fifty percent of the total group of infants had normal developmental quotients at a mean chronological age of 16.25±7.5 months (and corrected age 14 months). Infants developing posthemorrhagic hydrocephalus and requiring VP shunts had a poorer developmental outcome compared to those who did not require shunts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00270845
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  • 13
    Electronic Resource
    Electronic Resource
    Switching electrical power of bulk chalcogenide glassy semiconductors (1987)
    Springer
    Journal of materials science 6 (1987), S. 823-825 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01729025
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  • 14
    Electronic Resource
    Electronic Resource
    Study of the electrothermal switching effect in bulk glassy semiconductors by a computer simulation method (1987)
    Springer
    Journal of materials science 22 (1987), S. 4434-4438 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The electrical switching process in glassy semiconductors has been studied by a computer simulation method. The operation of a switching device has been considered from the standpoint of internal heat generation and the attendant rise in device temperature. A simple model has been chosen for an analysis in which the thermal and electrical parameters are related in a non-linear manner through the exponential dependence of conductivity on temperature. Furthermore, field-dependence effects (space-charge formation) are introduced in order to complete the model, which could be called “electronically assisted” thermal breakdown. The simulated current-voltage relationship exhibits a turnover voltage and conditions of negative differential resistance. To summarize, it is demonstrated that the application of a computer simulation is useful, in order to examine the switching phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01132043
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  • 15
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of the glassy semiconductor system Cu-As-Te (1988)
    Springer
    Journal of materials science 23 (1988), S. 1399-1404 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A method has been developed for measuring electrical conductivity in bulk samples of glassy semiconductors, based on the procedure described by Valdes, which is used to determine the conductivity of the compositions CU0.05As0.50Te0.45 and Cu0.15As0.40Te0.45. These experimental results are justified by the structural models corresponding to each of the compositions. The estimates of the number of bonds of each of the possible types, as well as their ionization energies, are used for this purpose. This analysis is preceded by the description of an electrical conduction model for this type of semiconductor material. Finally, the results obtained in the study of the properties of electrical switching are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01154607
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  • 16
    Electronic Resource
    Electronic Resource
    Optimization of the solid state fermentation process to obtain tempeh from hardened chickpeas (Cicer arietinum L.) (2000)
    Springer
    Plant foods for human nutrition 55 (2000), S. 219-228 
    Details
    ISSN: 1573-9104
    Keywords: Chickpeas ; Fermentation ; Hardened ; Optimization ; Tempeh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Solid state fermentation (SSF) represents a technological alternative for a great variety of cereals and legumes, orcombination of them, to improve their nutritional quality and to obtain edible products with palatable sensorial characteristics. The objective of this work was to find the best conditions of fermentation temperature and time to obtain tempeh from hardened chickpeas (Cicer arietinum L.) applying SSF. Response surface methodology(RSM) was applied over three response variables (phytic acid, in vitro protein digestibility and available lysine) to find best conditions of fermentation to carry out the process. A central composite experimental design with two factors [X1 = temperature (31–36 °C) and X2 = time (48–72 h)] in five levels (2 factorials,2 axial, I central) was used. Spores from Rhizopus stolonifer were suspended in distilled water (1 ×106 spores/mL) and used as starter. According to regression models, minimum and maximum levels of the response variables were 1.24–2.66 mg phytic acid/g ofsample DM, 77.6–83.5% in vitro protein digestibility and2.18–4.63 g available lysine/16 g N. The superposition ofcontour plots of each one of the response variables allowedresearchers to find, graphically, the best conditions for the SSF process: 35.8 °C for 42.7 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008192214018
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  • 17
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of the glassy semiconductor system Cu-As-Te (1988)
    Springer
    Journal of materials science 23 (1988), S. 1709-1717 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An X-ray diffraction radial-distribution study of Cu0,05As0,50Te0.45 (MI) and Cu0.15As0.40Te0.45 (MII) amorphous alloys obtained by the melt-quench method has been performed. The short-range order proposed from the radial distribution function (RDF) interpretation was calculated from a theoretical expression that takes into account the variation with s (scattering vector modulus) of the atomic scattering factor, and approximating it to polynomial functions. The local order of both alloys presents a deviation from the covalent character of the arsenic and tellurium elements bound to copper, increasing the mean coordination and not fitting the “octet” rule. For an in-depth study of the structural characteristics, tridimensional models were built by computer simulation of an X-ray diffraction experiment. Refinement was carried out by the Metropolis-Monte Carlo method with some modifications. The basic structure of both models may be described by a network of tetrahedra centred on copper and arsenic atoms. As both clusters are intermingled, the network connectivity is increased. Both models present a certain number of tellurium atoms with dangling bonds with average bonding distances above the mean value in the model which, together with the copper concentration, may be responsible for its decreased electrical resistivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01115710
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  • 18
    Electronic Resource
    Electronic Resource
    Optical constants of thermally evaporated amorphous GeSe3 thin films (1995)
    Springer
    Journal of materials science 30 (1995), S. 4133-4137 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The optical transmission spectra of amorphous Ge-Se films of chemical composition GeSe3, prepared by thermal evaporation, are measured overthe 300 nm to 2500 nm spectral region. A simple, straightforward procedure suggested by Swanepoel, which is based on the use of interference fringes, has been applied in order to derive the real and imaginary parts of the complex refractive index, and also the film thickness. Furthermore, thickness measurements made by a surface-profiling stylus are also carried out to cross-check the results obtained by the present optical method, employing only T(λ). The dispersion of n is discussed in terms of the single-oscillator Wemple and DiDomenico model, and the optical band gap E g opt has been determined from the absorption coefficient values, using the Tauc procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00360720
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  • 19
    Electronic Resource
    Electronic Resource
    Influence of temperature and interelectrode distance on the negative differential resistance in metal-chalcogenide glassy semiconductors (1995)
    Springer
    Journal of materials science 30 (1995), S. 3407-3414 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An investigation has been carried out, to elucidate some aspects of the current-controlled negative differential resistance (CCNDR) effect in bulk metal-chalcogenide glassy semiconductors. Because this phenomenon has been shown to be mainly of a thermal nature, a model, from the thermodynamic point of view, was developed, including some aspects related to the thermistors theory. The main conclusion from this model is the appearance of a current filament, which showed up when the material switched from the high electrical resistance to the low electrical resistance state, forming a crystalline filament between both electrodes. The variation of the CCNDR parameters with temperature and interelectrodic distance was studied, using both coplanar point electrodes and coplanar disc electrodes. The experimental results show a good agreement with the expected behaviour from the proposed thermal model (especially when natural convection was considered as the heat-exchanging process between the material and the ambient surrounding). In addition an algorithm was found to simulate the phenomenon computationally, using the experimentally determined physical parameters for the samples under study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00349887
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  • 20
    Electronic Resource
    Electronic Resource
    The shift of the absorption edge of thin chalcogenide films with copper (1997)
    Springer
    Journal of materials science 16 (1997), S. 1845-1847 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018537222787
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