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  • 11
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 136 (1997), S. 0 
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We report the case of a 20-year-old man, who was born with an intense erythema of the genital area, unresponsive to any treatment employed. When he was 9 months old, he presented with well-defined hyperkeratotic erythematous plaques around the mouth, eyes, nose, and perianal area, with similar plaques on the lateral aspect of the neck and axillae. At the same time the erythema of the genital area became hyperkeratotic. When he was 2 years old, he presented with a disabling palmoplantar keratoderma, initially focal, and later diffuse, also unresponsive to local or systemic treatments employed. The lesions have varied during the course of the disease without ever clearing completely. The axillary and inguinal plaques have shown spontaneous resolution on occasion. Six skin biopsies have been performed with no conclusive histological diagnosis of any of the typical disorders of keratinization. All treatments, topical and systemic, including etretinate and acitretin, have failed to improve the condition. We believe that this patient has Olmsted syndrome, a rare form of palmoplantar keratoderma with periorificial keratotic plaques.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 142 (2000), S. 0 
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We report a 3-year-old girl with a 12-month history of an acquired lipoatrophy that was rapidly progressive. Her karyotype revealed additional material on chromosome 10 at the 10q26 location. The human pancreatic lipase gene maps to chromosome 10q24–26, and we postulate an association. Lipoatrophic panniculitis describes the panniculitides in which atrophy is a feature. The classification of these diseases is confusing in the literature and the precise diagnosis still relies on a combination of clinical and laboratory assessment. Our finding of a chromosomal abnormality on chromosome 10q26 has not been described previously.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8951-8954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A non-separation approach to determine the spark-processed porous silicon thermal parameters is presented. This thermal characterization was performed through application of the photoacoustic technique, in combination with compositional models for spark-processed porous silicon samples. The thermal parameters obtained are in agreement with existing studies about the composition of this material. This approach opens the possibility of performing the thermal characterization of other porous semiconductors and analogous materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 901-903 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large areas of defect-free silicon-on-insulator (SOI) films have been obtained by softening (lowering the viscosity) a layer underlying the silicon film. During zone-melt recrystallization this sublayer provides a stress relief mechanism and relieves mechanical constraints for the growing crystal. Using this technique we have been able to obtain recrystallized silicon films that show significant improvement over the typical material obtained in samples without the soft layer recrystallized under identical conditions. We have reproducibly obtained SOI films that contain large areas that are free of subgrain boundaries as well as other defects such as twin boundaries and threading dislocations.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 896-903 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work process methodology was optimized to synthesize oriented barium strontium titanate (BST) (50/50) and (60/40) thin films on strontium titanate (100) and lanthanum aluminate (LAO) (100) substrates by using the chemical solution deposition technique. These films were characterized in terms of their phase formation behavior and structural growth characteristics using x-ray diffraction and atomic force microscopy. A tentative mechanism of the epitaxial growth has been proposed. Films were also characterized in terms of their dielectric properties. The high tunability and low dielectric loss of these films make them attractive for fabricating tunable dielectric devices. Accordingly, we have fabricated eight element coupled microstrip phase shifters and tested them in terms of their degree of phase shift and insertion loss characteristics. An insertion loss of 8.435 dB, phase shift in the order of 320° (2.6–14.5 V/μm) and κ factor (phase shift/dB of loss) of about 38.0°/dB was achieved in BST (60/40) films deposited on LAO (100) substrate which is comparable to the films grown by other film deposition techniques reported in the literature. The microstructure of the sol–gel derived films show surface porosity which may be responsible for the low dielectric strength of these films. Presently, we are studying the sintering mechanism and kinetics of these films in order to improve the density which is believed to further improve the phase shift and lower insertion loss to result in an improved tunability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract— Pregnant rats were fed for 15 days predelivery until 15 days postpartum a choline (Ch)-deficient diet (CD diet) or a CD diet supplemented with 0.8% Ch-CI (CS), 1%N-methylaminoethanol (MME) or 1%N,N-dimethylaminoethanol (DME). Gestation and parturition of the pregnant rats proceeded normally. However, all the pups born of dams fed the MME diet, and most of those born of dams fed the DME diet, died within 36 h of birth. No histological or cytological alterations were detected in the brain of the pups. Levels of Ch and acetylcholine (ACh) were elevated in the brain of pups born of dams fed the MME and DME diets, but not the CS diet. The content of total phospholipids in the brain of the pups was not altered by the diet fed to the dams. However, the phosphatidyl-Ch and phosphatidylaminoethanol (PAE) contents in the brain of the MME- and DME-exposed pups were markedly reduced. At the same time, significant amounts of DME, phosphatidyl-N-monomethylaminoethanol (PMME) and of phosphatidyl-N,N-dimethylaminoethanol (PDME) were present in the same brain areas. These results are evaluated and discussed in terms of providing a cause for the death of the MME- and DME-exposed neonatal rats.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2147-2152 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a spectrometer (visible-ultraviolet photon energy range) for the measurement of reflectance-difference spectra of cubic semiconductors. The spectrometer employs a photoelastic modulator to modulate the polarization of the light incident on the sample and allows for a simple procedure to correct the measured spectra for parasitic components associated with such modulation. The instrument reported has a higher throughput than more conventional setups. To illustrate the spectrometer performance we report on reflectance-difference spectra of (001) oriented GaAs single crystals doped with silicon donors at a level of 1018/cm3.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2034-2035 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a simple heater for sample temperature modulation in a thermoreflectance spectrometer. The performance of the heater is evaluated by determining the band to band transition energies at the E1 and E1+Δ1 critical points of GaAs.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 2926-2935 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The distribution of zeros of the wave functions of the quantum relativistic harmonic oscillator is studied. An analytic approximate expression for this distribution is derived within the framework of the WKB approximation. Using potential theory techniques, it is proved that this WKB approach gives the right asymptotic distribution, which is explicitly calculated.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 441-443 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Refractive indices n and absorption coefficients α of epitaxial metastable zincblende structure β-GaN(001) were determined over the subband-gap energy range between 0.8–3.1 eV from an analysis of optical transmission spectra. n was found to vary from 2.25 to 0.8 eV (1.55 μm) to 2.50 at 3.1 eV (0.4 μm) with an energy E (eV) dependence that is well described by a Sellmeir-type dispersion relationship, n2(E)=1+148/(38.3−E2). The refractive indices of β-GaN are 3%–4% smaller than previously reported values for hexagonal α-GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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